3D Power Device Current Redistribution Layer
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Solution Overview
Problem
Current power semiconductor devices face limitations in switching speed, cost, and efficiency, particularly due to current crowding and electrical breakdown issues in Group III-Nitride based devices, which degrade device ruggedness and performance.
Innovation Solution
A 3D power device architecture with stacked layers, including a Group III-Nitride based device layer, a current and/or heat redistribution layer with a metal pattern, and a control layer, which redistributes current and heat to alleviate current crowding and overheating, and provides pulse width modulation and overvoltage protection.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Speed
If Group III-Nitride based power devices are used to increase switching speed and power conversion performance, then switching speed and power conversion performance are improved, but current crowding occurs towards the slowest parts of the device which degrades device ruggedness
Solution Approach 1:
The patent introduces a current redistribution layer with specifically designed metal patterns (such as mesh or finger structures) that provide different current paths with varying resistance characteristics in different regions. This creates local quality variations that redirect current away from high-current-density regions towards lower-current-density regions, thereby redistributing current uniformly across the device and preventing current crowding while maintaining high switching speed.
2Power
If Group III-Nitride based power devices are used to increase power conversion performance, then power conversion performance is improved, but electrical breakdown may occur vertically through the carrier substrate due to large lattice mismatch
Solution Approach 1:
The patent introduces an intermediate carrier substrate layer positioned between the Group III-Nitride based power device and the circuit board. This intermediary layer serves as a buffer that accommodates the large lattice mismatch between the device and the circuit board, preventing vertical electrical breakdown while allowing the device to operate at high power conversion performance levels.
3Volume of moving object
If conventional 3D power device architecture with vertical interconnection is used to reduce size and improve integration, then device size is reduced and integration is improved, but heat dissipation becomes challenging leading to overheating
Solution Approach 1:
The patent transitions from conventional vertical heat dissipation paths to lateral heat dissipation paths by introducing an extended heat dissipation structure that spreads heat laterally across the device footprint. This dimensional change in heat dissipation architecture allows efficient heat removal while maintaining compact vertical integration, effectively managing temperature in the miniaturized 3D power device.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution enhances the ruggedness and efficiency of Group III-Nitride based power devices by reducing current density and overheating, allowing for higher current handling without compromising power density, and improving reliability and performance.
Implementation Method 1
the current and/or heat redistribution layer comprising a metal pattern being provided for laterally redistributing electrical currents
Implementation Method 2
the metal pattern being provided for laterally redistributing electrical currents and/or heat
Implementation Method 3
thermal conductors for conducting heat from the 3D power device to the carrier or board
Data Source
AI summary
A three-dimensional (3D) power device having a plurality of layers that are stacked on top of each other and insulated from each other by interlayers, the plurality of layers comprising a lower layer comprising electrical and thermal conductors; a group III-Nitride based device layer formed above the lower layer, the group III-Nitride based device layer comprising at least one group III-Nitride based power device; a control layer formed above the group III-Nitride based device layer, the control layer comprising at least one control device; and a redistribution layer in between the group III-Nitride based device layer and the control layer, the current redistribution layer comprising a metal pattern being provided for laterally redistributing electrical currents and/or heat.