3D Semiconductor Bonding Structure for Higher Circuit Density
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Solution Overview
Problem
The semiconductor industry faces challenges in further increasing circuit density due to limitations in shrinking minimum feature size and manufacturing issues in stacking and bonding multiple IC dies in 3D integrated circuits.
Innovation Solution
A semiconductor structure and manufacturing method involving a front-to-back and front-to-front bonding interface are developed, utilizing interconnect structures, bonding vias, and bonding contacts to stack and bond IC dies, with processes like dual and single damascene techniques to form conductive pathways and simplify manufacturing.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If minimum feature size is reduced to increase integration density, then more components can be integrated into a given area, but process limitations make it difficult to continue shrinking
Solution Approach 1:
The patent transitions from two-dimensional planar integration to three-dimensional stacked integration by bonding multiple IC dies vertically. This dimensional change allows continued increase in integration density without further reducing minimum feature size, as density improvement comes from stacking height rather than feature shrinkage.
2Quantity of substance
If multiple IC dies are stacked and bonded together to increase circuit density, then circuit density increases, but manufacturing challenges arise in stacking and bonding technologies
Solution Approach 1:
The patent divides the integrated circuit into multiple separate IC dies that are fabricated independently and then bonded together. This segmentation allows each die to be manufactured using existing process technology while achieving higher overall density through vertical stacking, thereby reducing the complexity of manufacturing ultra-fine features.
Solution Approach 2:
The patent introduces bonding interfaces and interconnect structures as intermediaries between stacked IC dies. These intermediaries facilitate electrical connections and mechanical bonding between dies, enabling complex 3D integration while managing the manufacturing challenges through standardized bonding processes.
3Quantity of substance
If more IC dies are bonded together to increase density, then circuit density increases, but manufacturing time and process complexity increase
Solution Approach 1:
The patent performs preliminary fabrication of multiple IC dies independently before stacking and bonding. This allows parallel manufacturing of individual dies, reducing overall manufacturing time compared to creating a single large-scale integrated circuit, as multiple dies can be processed simultaneously in separate fabrication sequences.
Data Source
AI summary
A semiconductor structure and a manufacturing method thereof are provided. A semiconductor structure includes top, bottom, and middle tiers. The bottom tier includes a first interconnect structure overlying a first semiconductor substrate, and a first front-side bonding structure overlying the first interconnect structure. The middle tier interposed between and electrically coupled to the top and bottom tiers includes a second interconnect structure overlying a second semiconductor substrate, a second front-side bonding structure interposed between the top tier and the second interconnect structure, and a back-side bonding structure interposed between the second semiconductor substrate and the first front-side bonding structure. A bonding feature of the second front-side bonding structure includes a first bonding via in contact with the second interconnect structure, a first bonding contact overlying the first bonding via, and a barrier layer interface between a bottom of the first bonding contact and a top of the first bonding via.