3D Semiconductor Bonding Thermal Pathways
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Solution Overview
Problem
Three-dimensional integrated circuits (3D-ICs) face significant challenges in heat removal due to increased power density and high thermal resistance, particularly in stacked configurations where heat transfer from semiconductor layers to heat sinks is inefficient, often relying on ineffective materials like insulating oxides and poor heat spreading capabilities.
Innovation Solution
The implementation of thermally conductive materials and structures, such as heat spreaders, thermally conductive shallow trench isolation, pre-metal dielectric regions, and etch stop layers, along with strategic placement of thermal contacts and vias, to enhance heat transfer and reduce thermal resistance within the 3D-IC architecture.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If multiple layers of transistors are stacked in 3D configuration, then transistor density and performance are improved, but heat removal becomes significantly more difficult due to increased power density and thermal resistance
Solution Approach 1:
The patent introduces vertical thermal pathways through the stacked layers by forming thermally conductive vias that extend from upper transistor layers down to heat sink structures on the substrate. This adds a third-dimensional heat extraction route, allowing heat to be removed vertically rather than relying solely on lateral heat spreading through intermediate layers.
Solution Approach 2:
The patent employs thermally conductive via materials as intermediary structures that bridge the thermal gap between upper transistor layers and the heat sink. These vias act as thermal conduits, providing a low-resistance pathway for heat transfer through the intermediate dielectric layers that would otherwise impede heat flow.
2Reliability
If conventional insulating oxide materials are used for isolation between layers, then electrical insulation is achieved, but thermal conduction is severely limited
Solution Approach 1:
The patent applies different material properties to different spatial locations: insulating oxide materials are used in horizontal regions where electrical isolation is required between adjacent transistor fingers, while thermally conductive materials are used in vertical via regions where heat extraction is prioritized. This local differentiation allows simultaneous optimization of both electrical insulation and thermal conduction.
Solution Approach 2:
The patent creates a composite thermal management structure combining electrically insulating oxide materials with thermally conductive via materials (such as metal-filled vias or thermally conductive dielectrics). This composite approach allows the structure to provide both electrical isolation function and thermal conduction function through different material phases within the same isolation system.
3Temperature
If heat spreader structures are added to improve heat distribution, then thermal management is enhanced, but device complexity and manufacturing steps increase
Solution Approach 1:
The patent merges the heat spreader function with existing substrate structures by forming thermally conductive regions that utilize the substrate itself as part of the heat spreading network. Rather than adding completely separate heat spreader components, the design integrates thermal management functionality into the substrate and interconnect structures that are already present in the device architecture.
Solution Approach 2:
The patent designs thermal management structures that serve multiple functions: the same thermally conductive via structures that extract heat also provide electrical interconnect functions, and the substrate structures that support mechanical integrity also serve as heat spreaders. This multi-functionality reduces the need for dedicated single-purpose thermal management components.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach significantly improves heat removal efficiency by creating effective thermal pathways and reducing thermal resistance, allowing for better management of heat in high-power 3D-ICs and maintaining desirable temperature levels across the chip, even in regions far from heat sinks.
Implementation Method 1
The implementation of thermally conductive materials and structures, such as heat spreaders, thermally conductive shallow trench isolation, pre-metal dielectric regions, and etch stop layers, along with strategic placement of thermal contacts and vias, to enhance heat transfer and reduce thermal resistance within the 3D-IC architecture.
Implementation Method 2
The implementation of thermally conductive materials and structures, such as heat spreaders, thermally conductive shallow trench isolation, pre-metal dielectric regions, and etch stop layers, along with strategic placement of thermal contacts and vias, to enhance heat transfer and reduce thermal resistance within the 3D-IC architecture.
Data Source
AI summary
A 3D semiconductor device, the device including: a first level, where the first level includes a first layer, the first layer including first transistors, and where the first level includes a second layer, the second layer including first interconnections; a second level overlaying the first level, where the second level includes a third layer, the third layer including second transistors, and where the second level includes a fourth layer, the fourth layer including second interconnections; and a plurality of connection paths, where the plurality of connection paths provides connections from a plurality of the first transistors to a plurality of the second transistors, where the second level is bonded to the first level, where the bonded includes oxide to oxide bond regions, where the bonded includes metal to metal bond regions, and where the device includes a plurality of capacitors.