3D Semiconductor Device Thermal Management via Conductive Layers
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Solution Overview
Problem
Three-dimensional integrated circuits (3D-ICs) face significant challenges in heat removal due to increased power density and high thermal resistance, particularly in stacked configurations where heat transfer from semiconductor layers to heat sinks is inefficient, often relying on ineffective thermal vias and insulating materials that impede heat conduction.
Innovation Solution
The implementation of a 3D semiconductor device structure with aligned transistors, a global power grid connected via vias, and thermally conductive materials to reduce thermal resistance, including the use of thermally conductive shallow trench isolation, pre-metal dielectric regions, and etch stop layers to enhance heat spreading and transfer within the device layers.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If multiple layers of transistors are stacked in 3D configuration, then transistor density and performance are improved, but heat removal becomes significantly more difficult due to increased power density and thermal resistance
Solution Approach 1:
The patent transitions from traditional 2D heat dissipation to 3D heat management by implementing heat removal structures that extend vertically through multiple transistor layers. Heat sinks and thermal pathways are positioned in the third dimension to directly interface with heat-generating regions in stacked transistor configurations, enabling efficient heat extraction from high-density 3D structures.
Solution Approach 2:
The patent introduces intermediary thermal management structures including heat sinks, thermal pathways, and cooling channels that act as mediators between the heat-generating transistor layers and the external environment. These intermediary structures facilitate heat transfer through conductive, convective, and radiative mechanisms while maintaining the compact 3D transistor architecture.
2Ease of manufacture
If conventional insulating materials and thermal vias are used in 3D-ICs, then manufacturing is simplified, but heat conduction is impeded due to high thermal resistance
Solution Approach 1:
The patent applies local quality by using thermally conductive materials specifically in regions where heat removal is critical, such as heat sink structures, thermal pathways, and heat transfer interfaces. These localized thermally conductive regions are embedded within the broader device structure, maintaining electrical insulation where needed while providing efficient heat conduction pathways in thermal management zones.
Solution Approach 2:
The patent employs composite material structures that combine thermally conductive and electrically insulating properties. These composite materials enable simultaneous heat removal and electrical isolation, addressing the dual requirements of thermal management and electrical functionality in 3D integrated circuits without compromising manufacturing feasibility.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach significantly reduces thermal resistance, enabling more effective heat removal from 3D-ICs by ensuring that all parts of the logic cells remain within desirable temperature limits, even in high-power applications, thereby improving the reliability and performance of 3D-ICs.
Implementation Method 1
thermally conductive materials to reduce thermal resistance, including the use of thermally conductive shallow trench isolation, pre-metal dielectric regions, and etch stop layers to enhance heat spreading and transfer within the device layers
Implementation Method 2
enhance heat spreading and transfer within the device layers
Data Source
AI summary
A 3D semiconductor device, the device including: a first single crystal layer including a plurality of first transistors and a first metal layer, where the first metal layer includes interconnecting the first transistors forming, at least in part a plurality of logic gates; a plurality of second transistors overlaying, at least in part the first single crystal layer; a plurality of third transistors overlaying, at least in part the second transistors; a second metal layer overlaying, at least in part the third transistors; Input/Output pads to provide connection to external devices, a local power grid to distribute power to the logic gates, where the third transistors are aligned to the first transistors with less than 40 nm misalignment, where the first single crystal layer includes a Phase Lock Loop (“PLL”) structure connected to at least one of the Input/Output pads, where a memory cell includes at least one of the third transistors.