3D Semiconductor Dummy Pillars for Reliability
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Solution Overview
Problem
Conventional two-dimensional semiconductor devices face limitations in integration density due to the high cost and complexity of forming fine patterns, and three-dimensional semiconductor devices suffer from reliability issues stemming from their structural characteristics.
Innovation Solution
A three-dimensional semiconductor device design featuring an electrode structure with stacked ground selection, cell, and string selection electrodes, including dummy pillars that penetrate boundaries between cell pads to support the electrode structure and minimize shape variation, thereby enhancing reliability and integration density.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If three-dimensional semiconductor devices are designed to increase integration density, then the integration density is improved, but the reliability deteriorates due to structural characteristics
Solution Approach 1:
Dummy pillars are introduced as intermediary structures between the electrode structure and the substrate. These dummy pillars serve as mediator elements that support the electrode structure and minimize shape variation, thereby resolving the contradiction between achieving high integration density through 3D stacking and maintaining device reliability by preventing structural deterioration.
Solution Approach 2:
The dummy pillars are designed to provide beforehand cushioning support to the electrode structure. By positioning these support structures in advance during the design phase, the electrode structure is protected against potential shape variation and deterioration that could occur during operation, thus maintaining reliability while enabling high integration density.
2Reliability
If dummy pillars are added to support the electrode structure, then the reliability is improved, but the device complexity increases
Solution Approach 1:
Instead of uniformly distributing dummy pillars throughout the entire device, the invention applies local quality by positioning dummy pillars specifically at boundaries between cell pads where they are most needed for support. This localized approach provides necessary structural reinforcement while minimizing the overall number of dummy pillars and reducing device complexity.
Solution Approach 2:
The dummy pillars serve multiple functions simultaneously: they provide structural support to the electrode structure, minimize shape variation, and act as boundaries between adjacent cell pads. This multi-functionality reduces the need for separate dedicated support structures, thereby reducing overall device complexity while maintaining reliability.
3Quantity of substance
If conventional two-dimensional devices use fine pattern formation to increase integration density, then the integration density is improved, but the manufacturing cost increases due to high-priced apparatuses
Solution Approach 1:
The invention transitions from two-dimensional planar device architecture to three-dimensional stacked architecture. By stacking electrode structures vertically in the third dimension, high integration density is achieved without requiring extremely fine lateral pattern dimensions, thereby avoiding the need for high-priced lithography apparatuses and reducing manufacturing cost.
Data Source
AI summary
A three-dimensional semiconductor device includes an electrode structure on a substrate that includes a first region and a second region, the electrode structure including a ground selection electrode, cell electrodes, and a string selection electrode which are sequentially stacked on the substrate wherein the ground selection electrode, the cell electrodes, and the string selection electrode respectively include a ground selection pad, cell pads, and a string selection pad which define a stepped structure in the second region of the substrate, a plurality of dummy pillars penetrating each of the cell pads and a portion of the electrode structure under each of the cell pads, and a cell contact plug electrically connected to each of the cell pads, wherein each of the dummy pillars penetrates a boundary between adjacent cell pads, and wherein the adjacent cell pads share the dummy pillars.