3D Semiconductor Stacking with Intermediate Heat Spreading
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Solution Overview
Problem
Conventional three-dimensional chip configurations face challenges in heat dissipation, particularly when stacking multiple chips, which restricts the complexity and power consumption of semiconductor devices due to the limitations of low-k dielectric materials and metallization systems, making it difficult to manage heat effectively, especially with high power-consuming chips.
Innovation Solution
Incorporating a heat spreading material with moderate to high thermal conductivity between stacked semiconductor chips, which can connect to a heat sink via external or internal means, enhancing heat dissipation capabilities and allowing for increased packing density and flexibility in chip configuration.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If multiple chips are stacked in three-dimensional configuration, then packing density is improved, but heat dissipation capability deteriorates
Solution Approach 1:
A heat spreading material is introduced as an intermediary layer between stacked chips to facilitate heat transfer. This material has moderate to high thermal conductivity and serves as a thermal mediator that collects heat from multiple chip surfaces and redirects it to heat sinks, resolving the heat dissipation problem while maintaining the high packing density of 3D stacking.
Solution Approach 2:
The patent transitions from planar heat dissipation to three-dimensional heat management by positioning heat spreading materials between stacked chips and connecting them to heat sinks through vertical thermal pathways. This dimensional approach enables efficient heat removal from high-density 3D configurations without compromising the compact structure.
2Adaptability or versatility
If high power-consuming chips are integrated, then functionality is improved, but heat management becomes more difficult
Solution Approach 1:
The heat spreading material acts as a thermal intermediary that simplifies heat management for high-power chips. By positioning this material between the power-consuming chip and heat sinks, the system achieves effective thermal control without requiring complex active cooling systems, thus maintaining functionality while reducing heat management complexity.
3Speed
If conventional low-k dielectric materials are used in metallization systems, then signal propagation is improved, but thermal conductivity deteriorates
Solution Approach 1:
The patent introduces a dedicated heat spreading material as a thermal intermediary layer that is distinct from the low-k dielectric materials used in signal transmission. This separation allows the metallization system to use low-k materials for optimized signal propagation while the heat spreading material handles thermal management, resolving the contradiction between signal speed and thermal conductivity.
Solution Approach 2:
Different regions of the device are assigned different material properties: low-k dielectric materials are used in the metallization system for optimal signal propagation, while heat spreading materials with high thermal conductivity are positioned in thermal management regions. This local differentiation allows simultaneous optimization of both signal propagation and heat dissipation.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The use of heat spreading materials significantly improves heat dissipation in three-dimensional chip stacks, enabling the integration of power-consuming chips while maintaining high packing density and flexibility, thereby enhancing the overall performance and efficiency of semiconductor devices.
Implementation Method 1
a heat spreading material positioned between the first chip and the second chip and covers at least a portion of the first metallization system
Data Source
AI summary
In a method of forming a three-dimensional semiconductor device, a first chip is provided that includes a first substrate, a first device layer positioned on and covering the first substrate, and a first metallization system positioned on and covering the first device layer, wherein the first device layer includes a plurality of first transistor elements. A second chip is also provided and includes a second substrate, a second device layer positioned on and covering the second substrate, and a second metallization system positioned on and covering the second device layer, wherein the second device layer includes a plurality of second transistor elements. The second chip is attached to the first chip so that a heat spreading material is positioned between the first chip and the second chip and covers at least a portion of the first metallization system.