3D Semiconductor Device With Hybrid Bonding And Thermal Vias
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
In 3D stacked integrated circuits, the degradation of wire performance with 'scaling' and the challenge of heat removal due to increased power density and thermal resistance hinder the advancement of IC performance and functionality.
Innovation Solution
The implementation of a semiconductor device with a hybrid bonding method, including a global power distribution network with higher conductivity than local networks, and the use of a shield/heat sink layer to facilitate defect annealing at low temperatures, preventing damage to underlying metal interconnects and improving heat dissipation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If conventional scaling is applied to reduce component sizes, then transistor performance and density improve, but wire performance degrades
Solution Approach 1:
The patent transitions from 2D planar integration to 3D stacked architecture, stacking multiple semiconductor layers vertically to reduce interconnect lengths while maintaining high transistor density. This dimensional change allows transistors to be placed closer in the vertical dimension, significantly reducing wire lengths and improving wire performance.
2Loss of time
If 3D stacking is implemented to reduce wire lengths, then wiring delay decreases, but heat removal becomes more difficult due to increased power density and thermal resistance
Solution Approach 1:
The patent segments the heat removal function by introducing dedicated thermal via structures that extend through multiple stacked layers to heat sinks. This segmentation allows heat to be extracted from each stacked layer independently, preventing heat accumulation and managing thermal resistance in the 3D architecture.
Solution Approach 2:
The patent introduces thermal via structures as intermediary heat conduction paths between the stacked semiconductor layers and the heat sinks. These thermal vias act as mediators that efficiently transfer heat from the high-power-density regions in the stacked layers to the cooling structures, addressing the thermal management challenge.
3Stability of the object's composition
If high temperature annealing is used to repair crystal lattice damage, then lattice structure is recovered, but underlying metal interconnects are damaged
Solution Approach 1:
The patent replaces conventional thermal annealing with ion beam annealing, substituting a thermal process with a mechanical/physical process. The ion beam directly repairs crystal lattice damage through atomic displacement and reorganization without requiring high temperatures, thereby protecting the underlying metal interconnects from thermal damage.
Solution Approach 2:
The patent changes the annealing parameter from temperature-based (thermal annealing at high temperatures) to energy-based (ion beam annealing with controlled ion energy). This parameter change allows lattice repair to occur at lower temperatures, preventing damage to temperature-sensitive metal interconnect layers.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enhances the alignment precision and conductivity of metal layers, reduces thermal resistance, and allows for defect-free crystalline semiconductor layers at lower temperatures, thereby improving the performance and reliability of 3D ICs while managing heat effectively.
Implementation Method 1
the use of a shield/heat sink layer to facilitate defect annealing at low temperatures
Implementation Method 2
The implementation of a semiconductor device with a hybrid bonding method
Data Source
AI summary
A semiconductor device, the device including: a first silicon layer including a first single crystal silicon; a first metal layer disposed over the first silicon layer; a second metal layer disposed over the first metal layer; a first level including a plurality of transistors, the first level disposed over the second metal layer, where the plurality of transistors include a second single crystal silicon; a third metal layer disposed over the first level; a fourth metal layer disposed over the third metal layer, where the fourth metal layer is aligned to the first metal layer with a less than 40 nm alignment error; and a via disposed through the first level, where the first level thickness is less than two microns.