3D Semiconductor Device With Inclined Electrode Pads
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Solution Overview
Problem
The challenge in semiconductor devices is to increase integration levels without the limitations imposed by expensive process equipment used for fine pattern formation in two-dimensional devices, necessitating the development of three-dimensional semiconductor memory devices with vertically stacked electrodes.
Innovation Solution
A three-dimensional semiconductor device design featuring vertically stacked lower and upper electrodes with inclined pad portions, where the vertical pad portions of adjacent electrodes are spaced apart by specific horizontal distances to facilitate higher integration and efficient fabrication processes.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Device complexity
If two-dimensional or planar semiconductor devices are used, then the fabrication process is simpler, but the level of integration is limited due to the area occupied by unit memory cells
Solution Approach 1:
The patent transitions from two-dimensional planar semiconductor devices to three-dimensional vertically stacked electrode structures. By stacking multiple electrode pairs in the vertical direction, the device achieves higher integration density without requiring finer lateral patterning, thus resolving the contradiction between fabrication simplicity and integration level.
2Manufacturing precision
If expensive process equipment is used for fine pattern formation, then the pattern fineness increases, but the cost increases and practical limitation remains
Solution Approach 1:
Instead of achieving higher integration through lateral pattern fineness that requires expensive equipment, the patent uses vertical stacking in the third dimension. This approach maintains relatively relaxed lateral patterning requirements while achieving high integration, thus reducing dependence on expensive fine-patterning equipment.
Solution Approach 2:
The patent changes the geometric parameters of the electrode structures by introducing inclined pad portions with specific angles and spacing relationships. The vertical pad portions of adjacent electrodes are spaced apart by a first horizontal distance, while pad portions between lower and upper electrodes are spaced by a second horizontal distance greater than the first, optimizing both manufacturability and device performance.
3Quantity of substance
If vertically stacked electrodes are implemented, then the level of integration increases, but the structural complexity increases
Solution Approach 1:
The patent divides the electrode structure into distinct segments: lower electrodes with vertical pad portions, upper electrodes with exposed pad portions, and insulating layers between them. Each segment has a specific function and geometry, allowing the complex three-dimensional structure to be fabricated through systematic, modular processing steps.
Solution Approach 2:
Different portions of the electrodes have different geometries optimized for their specific functions. The electrode portions are substantially parallel to the substrate top surface for lateral connections, while the pad portions are inclined to facilitate vertical connections and spacing. This local differentiation of geometry optimizes both integration density and manufacturability.
Data Source
AI summary
A three-dimensional semiconductor device may include a lower electrode structure having a plurality of lower electrodes vertically stacked on a substrate and an upper electrode structure having a plurality of upper electrodes stacked on the lower electrode structure. Each of the lower and upper electrodes may include an electrode portion that is parallel to a top surface of the substrate and a vertical pad portion that is inclined with respect to the top surface of the substrate. The vertical pad portions of adjacent lower electrodes may be spaced apart from each other by a first horizontal distance. The vertical pad portions of adjacent lower and upper electrodes may be spaced apart from each other by a second horizontal distance that is greater than the first horizontal distance.