3D Semiconductor Device Insulating Pattern Collapse Prevention
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Solution Overview
Problem
Current semiconductor devices face challenges in achieving high reliability due to the collapse of insulating patterns during the replacement process, which affects the integrity and performance of three-dimensional semiconductor memory devices.
Innovation Solution
The implementation of a semiconductor device with a staircase structure in the connection region, featuring alternating electrode and insulating patterns, and the use of dummy pillars that penetrate the stacks to support the insulating patterns, reducing the volume and area of insulating patterns and preventing collapse during the replacement process.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If insulating patterns are used in the replacement process, then electrical insulation is provided, but the insulating patterns collapse during the replacement process
Solution Approach 1:
Dummy pillars are formed in advance at strategic positions before the replacement process. These pillars are positioned to support insulating patterns during subsequent processing steps, preventing collapse before it can occur. The dummy pillars are removed after serving their support function, having already provided the necessary preliminary stabilization.
Solution Approach 2:
The dummy pillars act as intermediary support structures between the substrate and the insulating patterns during the replacement process. They provide temporary mechanical support to the insulating patterns, allowing the replacement process to proceed without causing pattern collapse. The intermediaries are removed after transferring their support function.
2Stability of the object's composition
If the volume and area of insulating patterns are reduced, then collapse is prevented, but electrical insulation capability may be compromised
Solution Approach 1:
The insulating patterns are designed with varying thicknesses at different locations. Regions requiring stronger mechanical support have thicker insulating patterns, while regions where electrical insulation is sufficient with thinner patterns use reduced thickness. This local variation optimizes both mechanical stability and electrical insulation performance.
Solution Approach 2:
The insulating patterns are formed using composite material structures with different dielectric properties. By selecting materials with appropriate mechanical strength and electrical insulation characteristics, the patterns achieve both collapse resistance and adequate insulation capability even at reduced volumes.
Data Source
AI summary
A semiconductor device includes a substrate including a cell region and a connection region. A stack is disposed on the substrate. A vertical channel structure penetrates the stack in the cell region. The stack includes electrode patterns and insulating patterns which are alternatingly and repeatedly stacked on the substrate. Each of the electrode patterns may extend in a first direction and include a pad portion. The pad portion is positioned in the connection region. The pad portion includes a first sidewall and a second sidewall that extend in the first direction on opposite sides of the pad portion. The first sidewall has a recessed portion that is recessed in a second direction crossing the first direction toward the second sidewall.