3D Semiconductor Metal Layers Power Grid Thermal Management
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Solution Overview
Problem
In 3D stacked integrated circuits, the degradation of wire performance with 'scaling' and the challenge of heat removal due to increased power density and thermal resistance hinder the advancement of IC performance and functionality.
Innovation Solution
The implementation of a semiconductor device with a hybrid bonding method that includes a global power distribution network with higher conductivity than local networks, and the use of a heat spreading material layer to facilitate defect annealing at lower temperatures, reducing thermal damage to metal interconnects and improving heat removal efficiency.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If scaling is applied to reduce component sizes, then transistor performance and density improve, but wire performance degrades
Solution Approach 1:
The patent transitions from 2D planar interconnect architecture to 3D stacked architecture with multiple metal layers separated by dielectric layers. This dimensional change allows wires to be routed in three dimensions, reducing wire length and improving signal integrity while maintaining transistor scaling benefits
2Loss of time
If 3D stacking is implemented to reduce wire lengths, then wiring delay decreases, but heat removal becomes more difficult due to increased power density and thermal resistance
Solution Approach 1:
The patent introduces heat spreader layers and thermal vias as intermediary structures between the active circuit layers and the heat sink. These intermediaries facilitate heat transfer from high-density 3D stacked regions to external cooling mechanisms, managing thermal resistance in the vertical direction
Solution Approach 2:
Power and ground metal layers are designed to serve dual functions: electrical power distribution and heat conduction pathways. This multi-functionality helps remove heat from high-power-density regions while maintaining electrical functionality
3Stability of the object's composition
If high temperature annealing is used to repair crystal lattice damage, then lattice structure is recovered, but underlying cell devices are damaged
Solution Approach 1:
The patent segments the annealing process by introducing a heat spreader layer that localizes and controls the thermal field. This allows selective annealing of damaged regions while maintaining lower temperatures in regions containing sensitive cell devices, preventing collateral damage
Solution Approach 2:
A heat spreader layer is introduced as an intermediary between the ion implantation region and the underlying cell devices. This intermediary absorbs and distributes thermal energy, enabling lattice repair in the target region while protecting sensitive devices below from thermal damage
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enhances the performance and functionality of 3D ICs by maintaining wire performance and reducing thermal damage, while effectively managing heat removal through improved power distribution and annealing techniques.
Implementation Method 1
the use of a heat spreading material layer to facilitate defect annealing at lower temperatures, reducing thermal damage to metal interconnects
Data Source
AI summary
A semiconductor device including: a first silicon layer including a first single crystal silicon and a plurality of first transistors; a first metal layer disposed over the first silicon layer; a second metal layer disposed over the first metal layer; a third metal layer disposed over the second metal layer; a second level including a plurality of second transistors, the second level disposed over the third metal layer; a fourth metal layer disposed over the second level; a fifth metal layer disposed over the fourth metal layer, a connection path from the fifth metal layer to the second metal layer, where the connection path includes a via disposed through the second level, where the via has a diameter of less than 450 nm, where the fifth metal layer includes a global power distribution grid, and where a typical thickness of the fifth metal layer is greater than a typical thickness of the second metal layer by at least 50%.