3D Semiconductor Power Capacitance via Vertical Stacking
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Solution Overview
Problem
The challenge in semiconductor devices is to achieve high operating speeds and reliability while maintaining a compact form factor, as finer patterns due to high integration make it difficult to secure sufficient power capacitance within a limited area.
Innovation Solution
A three-dimensional semiconductor device design that includes a semiconductor substrate with a cell array region and a peripheral circuit region, featuring vertically stacked electrodes, a MOS capacitor, and interlayer dielectric layers with power lines and plugs that connect to the capacitor terminals, allowing for efficient power capacitance within a limited area through the use of first and second power lines and lower plugs.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If high integration is implemented with finer patterns, then device functionality and operating speed are improved, but the ability to secure sufficient power capacitance within limited area deteriorates
Solution Approach 1:
The patent transitions from planar capacitor layout to vertical three-dimensional capacitor structures. Multiple capacitor electrodes are stacked vertically along the third dimension, allowing power capacitance to be accumulated in the vertical direction rather than consuming horizontal area, thus resolving the contradiction between high integration and sufficient power capacitance area
Solution Approach 2:
The patent implements nested capacitor structures where multiple capacitor electrodes are positioned at different vertical levels within a compact footprint. The capacitors are arranged in a nested configuration where upper capacitors are positioned above lower capacitors, maximizing space utilization and providing sufficient power capacitance without increasing the planar area
2Reliability
If more power capacitance is added to maintain stable power, then power stability is improved, but device area increases
Solution Approach 1:
The patent utilizes the vertical dimension to stack multiple capacitor electrodes, enabling increased power capacitance to be achieved without expanding the horizontal device area. The vertical stacking allows multiple capacitance elements to occupy the same footprint while providing cumulative capacitance for stable power supply
Solution Approach 2:
The patent combines multiple capacitor structures into a single integrated power capacitor unit. Multiple capacitor electrodes and insulating layers are merged into one compact three-dimensional assembly that provides the required power stability while occupying minimal area
Data Source
AI summary
A three-dimensional semiconductor device includes a semiconductor substrate including a cell array region and a peripheral circuit region, an electrode structure including electrodes vertically stacked on the cell array region, a MOS capacitor on the peripheral circuit region, an interlayer dielectric layer covering the electrode structure and the MOS capacitor, first and second power lines spaced apart from each other in a first direction and extending in a second direction on the interlayer dielectric layer, first lower plugs connected to the first power line and a first terminal of the MOS capacitor, and second lower plugs connected to the second power line to a second terminal of the MOS capacitor. The second power line is on one of the first lower plugs that is adjacent to some of the second lower plugs in one of the first and second directions.