3D Semiconductor Stacked Layers Thermal Management
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Solution Overview
Problem
Three-dimensional integrated circuits (3D-ICs) face significant challenges in heat removal due to increased power density and high thermal resistance, particularly in stacked configurations where heat transfer from semiconductor layers to heat sinks is hindered by the distance and poor heat spreading capabilities of wiring dielectric regions.
Innovation Solution
The implementation of thermal contacts and thermally conductive materials, such as copper or aluminum, integrated into the power and ground distribution networks, and the use of thermally conductive shallow trench isolation and pre-metal dielectric regions, along with heat spreaders and etch stop layers, to reduce thermal resistance and enhance heat transfer.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If multiple layers of transistors are stacked in 3D configuration, then transistor density and performance are improved, but heat removal becomes significantly more difficult due to increased power density and thermal resistance
Solution Approach 1:
The patent transitions from traditional 2D heat dissipation to 3D heat management by implementing heat spreaders that extend laterally beneath stacked transistor layers. This dimensional expansion allows heat to be conducted away from high-density regions in multiple directions, effectively managing thermal loads in the vertical stacking configuration without compromising transistor density.
Solution Approach 2:
The patent introduces heat spreaders as intermediary thermal management components positioned between the transistor layers and the heat sink. These heat spreaders act as thermal mediators that collect heat from multiple transistor layers and redistribute it to dedicated heat removal paths, decoupling the high-density transistor region from direct thermal contact requirements.
2Ease of operation
If wiring dielectric regions are used to connect transistor layers, then interconnect functionality is achieved, but heat spreading capability deteriorates due to poor thermal conductivity of dielectric materials
Solution Approach 1:
The patent segments the thermal management function from the electrical interconnect function. While wiring dielectric regions maintain their insulating properties for electrical isolation, separate heat spreader structures are introduced to handle thermal conduction. This segmentation allows each component to optimize its primary function without compromise.
Solution Approach 2:
The patent employs composite thermal management structures that combine materials with high thermal conductivity (such as metal heat spreaders) with the existing wiring dielectric materials. This composite approach maintains the electrical insulation properties of the dielectric while adding superior heat spreading capability through the thermally conductive components.
3Volume of moving object
If distance between transistor layers is reduced to improve integration, then device compactness increases, but thermal resistance to heat sink increases
Solution Approach 1:
The patent replaces reliance on direct vertical thermal conduction through thin dielectric layers with a lateral heat spreading mechanism. Heat spreaders conduct heat horizontally from high-density regions to dedicated heat removal paths, substituting the ineffective vertical thermal path with a more efficient lateral conduction route that is not constrained by layer spacing.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
These solutions effectively lower thermal resistance, allowing for more efficient heat removal from 3D-ICs, maintaining transistor temperatures within desirable limits and enabling the cooling of higher power devices while providing mechanical stability and structural strength.
Implementation Method 1
The implementation of thermal contacts and thermally conductive materials, such as copper or aluminum, integrated into the power and ground distribution networks
Implementation Method 2
along with heat spreaders and etch stop layers, to reduce thermal resistance and enhance heat transfer
Implementation Method 3
wherein said bonded comprises oxide to oxide bond regions, wherein said bonded comprises metal to metal bond regions
Data Source
AI summary
A 3D semiconductor device, the device including: a first level, where the first level includes a first layer, the first layer including first transistors, and where the first level includes a second layer, the second layer including first interconnections; a second level overlaying the first level, where the second level includes a third layer, the third layer including second transistors, and where the second level includes a fourth layer, the fourth layer including second interconnections; and a plurality of connection paths, where the plurality of connection paths provides connections from a plurality of the first transistors to a plurality of the second transistors, where the second level is bonded to the first level, where the bonded includes oxide to oxide bond regions, where the bonded includes metal to metal bond regions, where the second level includes at least one memory array, and where the third layer includes material other than silicon.