3D Semiconductor Thermal Management via Conductive Interconnects
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Solution Overview
Problem
Three-dimensional integrated circuits (3D-ICs) face significant challenges in heat removal due to increased power density and high thermal resistance, particularly in stacked configurations where heat transfer from semiconductor layers to heat sinks is hindered by the distance and poor heat spreading capabilities of wiring dielectric regions.
Innovation Solution
The implementation of thermal contacts and thermally conductive materials, such as copper and graphene, integrated into the power and ground distribution networks, and the use of thermally conductive shallow trench isolation and pre-metal dielectric regions, along with heat spreaders, to enhance heat transfer and reduce thermal resistance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If multiple layers of transistors are stacked in 3D configuration, then transistor density and performance are improved, but heat removal becomes significantly more difficult due to increased power density and thermal resistance
Solution Approach 1:
The patent introduces thermal interface materials as intermediary substances between the semiconductor die and heat sink, and between stacked dies, to facilitate heat transfer. These materials act as mediators that bridge the thermal gap created by 3D stacking, enabling efficient heat removal from upper transistor layers to the heat sink below.
Solution Approach 2:
The patent extracts heat from the 3D stacked transistor structure by introducing dedicated thermal management components including thermal vias that conduct heat vertically through the stacked layers, and heat spreaders that extract heat laterally from high-density regions to lower-density regions, effectively removing the harmful thermal accumulation.
2Ease of operation
If wiring dielectric regions are used to connect transistor layers, then electrical connections are established, but heat spreading capability deteriorates due to poor thermal conductivity of dielectric materials
Solution Approach 1:
The patent employs composite material structures where thermally conductive materials are integrated with or replace traditional wiring dielectric regions. This creates a hybrid structure that maintains the electrical insulation properties needed for wiring while significantly improving thermal conductivity to enable effective heat spreading across the 3D stacked structure.
Solution Approach 2:
The patent makes certain structural elements serve dual functions: electrical connection and heat spreading. By designing interlayer structures that provide both electrical connectivity between transistor layers and thermal pathways for heat removal, the same components perform multiple functions, eliminating the need for separate thermal management structures.
3Length of stationary object
If distance between transistor layers is reduced for better integration, then device compactness is improved, but thermal resistance increases due to limited heat dissipation pathways
Solution Approach 1:
The patent addresses thermal management in the vertical dimension by introducing thermal vias and conductive pathways that extend heat transfer routes through the stacked layers. This adds a vertical heat dissipation dimension complementing the horizontal spreading, enabling effective thermal management in the compact 3D configuration where lateral heat flow alone is insufficient.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
These solutions effectively reduce thermal resistance and improve heat removal efficiency, maintaining transistors within desirable temperature ranges and enabling the cooling of higher power 3D-ICs while providing mechanical stability and structural strength.
Implementation Method 1
The implementation of thermal contacts and thermally conductive materials, such as copper and graphene, integrated into the power and ground distribution networks
Implementation Method 2
the use of thermally conductive shallow trench isolation and pre-metal dielectric regions, along with heat spreaders, to enhance heat transfer
Implementation Method 3
effectively reduce thermal resistance and improve heat removal efficiency, maintaining transistors within desirable temperature ranges
Data Source
AI summary
A 3D semiconductor device, the device including: a first level, wherein said first level comprises a first layer, said first layer comprising first transistors, and wherein said first level comprises a second layer, said second layer comprising first interconnections; a second level overlaying said first level, wherein said second level comprises a third layer, said third layer comprising second transistors, and wherein said second level comprises a fourth layer, said fourth layer comprising second interconnections; and a plurality of connection paths, wherein said plurality of connection paths provides connections from a plurality of said first transistors to a plurality of said second transistors, wherein said second level is bonded to said first level, wherein said bonded comprises oxide to oxide bond regions, wherein said bonded comprises metal to metal bond regions, wherein said second level comprises at least one Electrostatic discharge (ESD) circuit.