3D Semiconductor Device with Trap-Rich Interlayer for Thermal Management
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Solution Overview
Problem
In 3D stacked integrated circuits, heat removal is challenging due to high power density and thermal resistance, with existing methods like liquid coolant passage and thermal vias facing limitations, and hydrogen ion implantation damaging lattice structures, requiring high-temperature annealing that can harm underlying devices.
Innovation Solution
Incorporating a heat spreading or optically reflecting material layer between sensitive metal interconnect layers and the layer being annealed, using optical annealing techniques such as laser-spike anneal to repair defects without damaging underlying layers, and employing a trap-rich layer for improved heat management and EM interference protection.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If hydrogen ion implantation is used to form detaching layer, then layer transfer can be achieved, but crystal lattice structure is damaged requiring high-temperature annealing that damages underlying devices
Solution Approach 1:
A sacrificial intermediary layer (e.g., SiGe, SiO2, or organic polymer) is introduced between the donor layer and the underlying devices. This intermediary layer absorbs the damage from hydrogen ion implantation and subsequent high-temperature annealing, protecting the underlying devices while enabling successful layer transfer. The sacrificial layer is removed after transfer, leaving no residue.
Solution Approach 2:
The patent replaces the conventional ion-implantation-based detaching method with alternative mechanisms such as chemical etching, mechanical cleavage, or thermal expansion mismatch. These methods achieve layer release without causing crystal lattice damage or requiring high-temperature annealing that would harm underlying devices.
2Power
If high power density is used in 3D stacked ICs, then functionality and performance improve, but heat removal becomes challenging due to thermal resistance
Solution Approach 1:
Thermal intermediary structures such as heat spreaders, heat sinks, or thermally conductive interlayer materials are introduced between the high-power-density active layers and the substrate. These intermediaries provide low-thermal-resistance pathways for heat dissipation, enabling high power density operation without excessive temperature rise in the underlying devices.
Solution Approach 2:
The patent transitions from planar (2D) heat dissipation to three-dimensional (3D) heat management structures. This includes vertical heat sinks, through-silicon vias for thermal conduction, and stacked thermal management layers that dissipate heat in the vertical dimension, significantly improving heat removal capability in high-power-density 3D ICs.
3Manufacturing precision
If conventional thermal annealing is used to repair crystal lattice defects, then defects are repaired, but underlying metal interconnect layers and low-k dielectric layers are damaged
Solution Approach 1:
A thermal barrier intermediary layer (e.g., tungsten, molybdenum, or ceramic material) is placed between the layer requiring annealing and the underlying temperature-sensitive structures. This intermediary layer blocks heat transfer to the metal interconnect and low-k dielectric layers, enabling defect repair at temperatures that would otherwise cause damage to underlying components.
Solution Approach 2:
The patent replaces conventional thermal field-based annealing with alternative defect repair mechanisms such as optical annealing (laser processing), plasma treatment, or chemical vapor deposition. These methods can repair crystal lattice defects with minimal thermal impact on underlying temperature-sensitive layers.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables effective heat dissipation and defect annealing at lower temperatures, protecting sensitive layers and improving the reliability of 3D ICs by reducing thermal damage and enhancing power handling capabilities.
Implementation Method 1
Incorporating a heat spreading or optically reflecting material layer between sensitive metal interconnect layers and the layer being annealed, using optical annealing techniques such as laser-spike anneal
Implementation Method 2
using optical annealing techniques such as laser-spike anneal to repair defects without damaging underlying layers
Implementation Method 3
Incorporating a heat spreading or optically reflecting material layer between sensitive metal interconnect layers and the layer being annealed
Data Source
AI summary
A 3D semiconductor device including: a first level, where the first level includes a first layer, the first layer including first transistors, and where the first level includes a second layer, the second layer including first interconnections; a second level overlaying the first level, where the second level includes a third layer, the third layer including second transistors, and where the second level includes a fourth layer, the fourth layer including second interconnections; a trap-rich layer disposed between the first level and the second level; and a plurality of connection paths, where the plurality of connection paths provides connections from a plurality of the first transistors to a plurality of the second transistors, where the plurality of connection paths includes vertical connections connecting from the first interconnections to the second interconnections, where the third layer includes crystalline silicon, and where the second level is bonded to the first level.