3D Semiconductor Device With Ultra-Thin Die Integration
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Solution Overview
Problem
Current 3D integrated circuit technologies face challenges in heat removal and lattice structure damage during the hydrogen ion implantation process, leading to high temperature thermal treatments that can damage underlying devices and interconnect layers, and there is a need for more efficient die to wafer integration processes to reduce costs and increase throughput.
Innovation Solution
The development of a 3D semiconductor device with ultra-thin dies and innovative die to wafer integration methods, including the use of low porosity and high porosity layers, epitaxial layer growth, and precise die alignment and bonding techniques to enable efficient heat removal and reduce processing temperatures, allowing for defect-free single crystalline semiconductor layers at lower temperatures.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If high temperature thermal treatment is applied to cure lattice damage from hydrogen ion implantation, then lattice structure is recovered, but underlying devices and interconnect layers are damaged
Solution Approach 1:
The patent applies preliminary action by forming the detached layer through hydrogen ion implantation before the actual wafer detachment process. This pre-treatment creates a weakened interface that enables low-temperature separation, preventing the need for high-temperature thermal treatment that would damage underlying devices and interconnect layers.
Solution Approach 2:
The patent skips the conventional high-temperature thermal treatment step by using hydrogen ion implantation to create a detached layer that allows for low-temperature wafer separation. This rushes through the lattice damage curing process by alternative means, avoiding the harmful high-temperature exposure to sensitive underlying structures.
2Ease of manufacture
If conventional die to wafer integration processes are used, then integration is achieved, but costs are high and throughput is low
Solution Approach 1:
The patent applies segmentation by dividing the wafer into multiple detachable segments (individual wafers or dies) using the detached layer formation technique. This allows for parallel processing and independent handling of multiple units, significantly increasing throughput and reducing integration costs compared to conventional sequential die-to-wafer bonding processes.
Solution Approach 2:
The patent changes the temperature parameter from conventional high-temperature thermal treatment to low-temperature processing enabled by hydrogen ion implantation. This parameter change allows for easier manufacture with improved efficiency, as the low-temperature process can be applied to multiple wafers simultaneously without damaging sensitive interconnect layers, thereby increasing productivity and reducing costs.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables effective heat removal from 3D ICs, reduces the risk of lattice damage, and improves the integration process efficiency, leading to lower costs and higher throughput in producing 3D IC devices with enhanced performance and reliability.
Implementation Method 1
exfoliating implant method in which ion-implanting Hydrogen into the wafer surface
Implementation Method 2
a long time thermal treatment in very high temperature is required
Implementation Method 3
enables formation of defect-free single crystalline semiconductor layer at low temperatures
Data Source
AI summary
A 3D semiconductor device and structure, including: a first die including first transistors and first interconnect, overlaid by a second die including second transistors and second interconnect, where the first die has a first die area and the second die has a second die area, where the first die area is at least 10% larger than the second die area, and where the second die has a thickness of less than four microns.