3D SiP Dual-Sided Routing to Reduce Package Warpage

Resolve Bottlenecks,
Find Innovative Solutions
Generate Solutions

Solution Overview

Problem

The semiconductor industry faces challenges in achieving smaller and more creative packaging techniques for semiconductor dies, particularly in reducing package warpage and increasing integration density, as existing methods struggle to balance component density and structural integrity in Package-on-Package (PoP) technology.

Innovation Solution

A dual-sided routing approach is implemented in a semiconductor system-in-package (SiP) structure, where one redistribution structure has a fan-out design and the other is carrier-type, with a fan-out redistribution structure on one side and a substrate-type on the other, embedded in an encapsulant to form a thinner and stronger package with reduced warpage.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Quantity of substance

If Package-on-Package (PoP) technology is used to increase integration density, then component density is improved, but package warpage increases

Engineering Contradiction:
Improvecomponent densityVSAvoidpackage warpage
Core Design Contradiction:
Quantity of substanceVSStability of the object's composition

Solution Approach 1:

The patent divides the routing function into two separate redistribution structures located on opposite sides of the semiconductor die. This segmentation allows each redistribution structure to be independently optimized and positioned to balance the mechanical stresses, thereby reducing package warpage while maintaining high component density through the stacked PoP configuration.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The patent employs asymmetric routing designs where the first and second redistribution structures have different configurations, trace layouts, or positioning relative to the die. This asymmetry is intentionally introduced to counterbalance the thermal and mechanical expansion differences between stacked packages, effectively reducing warpage while achieving high integration density.

Inventive Principle:
Principle #4Asymmetry

2Quantity of substance

If iterative reduction of minimum feature size is implemented to improve integration density, then more components can be integrated into a given area, but manufacturing complexity increases

Engineering Contradiction:
Improveintegration densityVSAvoidmanufacturing complexity
Core Design Contradiction:
Quantity of substanceVSDevice complexity

Solution Approach 1:

The patent transitions from planar routing to three-dimensional dual-sided routing by placing redistribution structures on both the front and back sides of the semiconductor die. This dimensional change allows routing paths to be distributed across multiple planes, reducing the complexity of any single layer while achieving higher integration density through vertical stacking.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

3Productivity

If thinner package structure is achieved through dual-sided routing, then integration efficiency is improved, but structural strength may be compromised

Engineering Contradiction:
Improveintegration efficiencyVSAvoidstructural strength
Core Design Contradiction:
ProductivityVSStrength

Solution Approach 1:

The patent employs composite construction by combining multiple redistribution structures, die layers, and encapsulant materials in a stacked configuration. This composite approach allows the thin package structure to maintain structural integrity through the distributed reinforcement provided by the dual-sided routing layers and encapsulant, achieving both thinness and strength simultaneously.

Inventive Principle:
Principle #40Composite materials

Data Source

PatentUS11824007B2Dual-sided routing in 3D SiP structure
Publication Date: 2023.11.21 TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD
  • US11824007B2 patent drawing
  • US11824007B2 patent drawing
  • US11824007B2 patent drawing

AI summary

A semiconductor package is fabricated by attaching a first component to a second component. The first component is assembled by forming a first redistribution structure over a substrate. A through via is then formed over the first redistribution structure, and a die is attached to the first redistribution structure active-side down. The second component includes a second redistribution structure, which is then attached to the through via. A molding compound is deposited between the first redistribution structure and the second redistribution structure and further around the sides of the second component.