3D SoIC Heat Dissipation Structure With TIM Rings
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Solution Overview
Problem
Three-dimensional system on integrated chip structures face high heat density and poor thermal dissipation performance, leading to electromigration and reliability issues due to increased chip density and varying thermal tolerances among different materials, which can cause thermo-mechanical stress and heat distribution challenges.
Innovation Solution
The implementation of thermal interface material (TIM) rings and vertical conductive structures in dummy and molding regions, as well as within active chip areas, to create additional heat dissipation paths, utilizing materials like silver, aluminum nitride, and thermally conductive materials to channel heat away from high heat output areas and hot spots to a heat sink.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If chip density is increased in three-dimensional system on integrated chip structures, then productivity and functionality are improved, but heat density increases and thermal dissipation performance deteriorates
Solution Approach 1:
The patent segments the heat dissipation function by introducing separate thermal interface material rings around each chip layer, rather than relying on a single bulk thermal management system. This segmentation allows localized heat management at each stacking level, improving overall thermal dissipation efficiency in high-density 3D structures
Solution Approach 2:
The patent transitions from two-dimensional planar heat dissipation to three-dimensional vertical heat dissipation by stacking multiple chip layers with thermal interface material rings at each level. This dimensional change enables heat to be dissipated through multiple vertical pathways simultaneously, addressing the thermal challenges of increased chip density
2Adaptability or versatility
If different materials with varying thermal tolerances are used in the chip structure, then functionality and integration are improved, but thermo-mechanical stress increases due to thermal expansion mismatches
Solution Approach 1:
The patent applies local quality by placing thermal interface material rings with specific thermal and mechanical properties at strategic locations around each chip layer. These rings provide localized thermal management and mechanical compliance exactly where heat generation and material interfaces occur, rather than attempting to manage stress uniformly throughout the entire structure
Solution Approach 2:
The thermal interface material rings act as intermediary elements between chips with different thermal tolerances and the surrounding structure. These rings mediate the thermal and mechanical interactions, allowing different materials to be integrated while reducing direct thermal expansion mismatches between dissimilar materials
3Temperature
If thermal interface material rings are added to improve heat dissipation, then thermal dissipation performance is improved, but device complexity increases
Solution Approach 1:
The thermal interface material rings serve multiple functions simultaneously: they provide thermal conduction pathways, mechanical compliance, stress distribution, and structural support. This multi-functionality improves thermal dissipation while minimizing the need for additional separate components, thereby limiting the increase in device complexity
Solution Approach 2:
The thermal interface material rings are nested around each chip layer within the vertical stack, integrating the thermal management function into the existing chip architecture rather than adding external components. This nesting approach improves heat dissipation while maintaining a compact structure with minimal increase in overall device complexity
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This solution effectively reduces the average operating temperature of memory chips below 90°C, improving thermal dissipation and reducing electromigration risks by enhancing heat conductivity and managing thermal stress across the 3D SoIC structure.
Implementation Method 1
The implementation of thermal interface material (TIM) rings and vertical conductive structures... to create additional heat dissipation paths, utilizing materials like silver, aluminum nitride, and thermally conductive materials to channel heat away from high heat output areas and hot spots to a heat sink
Implementation Method 2
channel heat away from high heat output areas and hot spots to a heat sink
Data Source
AI summary
The present disclosure describes heat dissipating structures that can be formed either in functional or non-functional areas of three-dimensional system on integrated chip structures. In some embodiments, the heat dissipating structures maintain an average operating temperature of memory dies or chips below about 90° C. For example, a structure includes a stack with chip layers, where each chip layer includes one or more chips and an edge portion. The structure further includes a thermal interface material disposed on the edge portion of each chip layer, a thermal interface material layer disposed over a top chip layer of the stack, and a heat sink over the thermal interface material layer.