3D Nanowire SRAM Cell Layout for Speed-Stability Balance

The patent applies local quality by configuring different numbers of nanowire transistors for different transistor positions within the SRAM cell. Specifically, the first and second transistors use one nanowire transistor each, while the third and fourth transistors use two nanowire transistors each, and the fifth and sixth transistors use one nanowire transistor each. This non-uniform configuration optimizes the performance ratio of operation speed and stability for each transistor based on its specific functional requirements within the circuit.

The patent segments the SRAM cell into six distinct transistor units, each with independently configured nanowire transistor counts. This segmentation allows each transistor to be optimized separately according to its specific performance requirements, rather than using a uniform configuration for all transistors.

The patent implements local quality by selectively increasing the nanowire transistor count only where needed for performance optimization. The third and fourth transistors use two nanowire transistors each to achieve the required performance ratio, while the other transistors use one nanowire transistor each. This targeted approach improves operation stability without proportionally increasing the total cell area.

The patent applies partial action by using exactly the number of nanowire transistors needed for each transistor position. Rather than uniformly increasing the nanowire count for all transistors, the invention uses additional nanowire transistors only for the third and fourth transistors where performance optimization is required, avoiding unnecessary area expansion.