3D Stacked Semiconductor Structure With Bipolar Current Mediation
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Solution Overview
Problem
Existing 3D memory devices face issues with degraded channel current due to increased resistance and limited carrier mobility in stacked layers, leading to performance degradation and reliability concerns, particularly in lower stacks.
Innovation Solution
Implementing a semiconductor device with a stacked structure that includes a connecting structure, such as an NPN amplifier, between adjacent semiconductor structures to enhance channel current uniformity and reliability, allowing for higher storage density and capacity without compromising channel current in lower stacks.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If 3D stacked memory structures are used to increase storage density, then storage capacity increases, but channel current degrades due to increased resistance in lower stacks
Solution Approach 1:
A connecting structure with bipolar transistor (NPN or PNP) is introduced as an intermediary between the first and second semiconductor structures. This connecting structure includes a first region, second region, and third region that form a bipolar transistor amplifier. The bipolar transistor actively amplifies and redistributes channel current to lower stacks, compensating for the increased resistance and maintaining uniform channel current across all stacks despite the high storage density achieved through 3D stacking.
2Quantity of substance
If more layers are stacked to increase capacity, then storage capacity increases, but carrier mobility is limited leading to performance degradation
Solution Approach 1:
The bipolar transistor in the connecting structure serves as a mediator that actively manages carrier flow. The first region, second region, and third region of the bipolar transistor work together to amplify carrier current and overcome the limitations of carrier mobility in deeply stacked structures. This allows the device to maintain high productivity in terms of carrier transport even as the number of stacked layers increases to enhance storage capacity.
3Quantity of substance
If stacked semiconductor structures are bonded to increase density, then storage density increases, but resistance increases causing channel current degradation
Solution Approach 1:
The connecting structure with bipolar transistor configuration acts as a power amplification stage between the stacked semiconductor structures. The bipolar transistor's ability to provide current gain (beta) compensates for the resistance increase introduced by bonding multiple stacks together. The first region, second region, and third region work together to amplify the channel current, ensuring that power delivery to lower stacks remains sufficient despite the increased resistance from additional bonding interfaces.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution achieves uniform channel current distribution, enhancing the reliability and longevity of 3D NAND memory devices, enabling over 1000 layers without channel current degradation, and improving read/write operations.
Implementation Method 1
a connecting structure, such as an NPN amplifier, between adjacent semiconductor structures to enhance channel current uniformity and reliability
Data Source
AI summary
Systems, devices, and methods for a semiconductor device are provided. In one aspect, a semiconductor device includes a first semiconductor structure. The first semiconductor structure includes a plurality of first channel structures extending along a first direction and a plurality of connecting structures. Each connecting structure includes a first region of a first conductive type, a second region of a second conductive type, and a third region of the first conductive type. A first end of a first channel structure is in contact with the first region of a corresponding connecting structure. The semiconductor device further includes a second semiconductor structure, which includes a plurality of second channel structures extending along the first direction. The first semiconductor structure and the second semiconductor structure are bonded along the first direction. The corresponding connecting structure is coupled to a first end of a corresponding second channel structure.