3D Semiconductor Stacking With Near-Zero Bond Line and No TSVs
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Solution Overview
Problem
Current semiconductor packaging methods require through-silicon vias (TSVs) for vertical stacking, which involves complex processing steps and results in larger package thickness, limiting the compactness and efficiency of semiconductor devices.
Innovation Solution
A method for stacking semiconductor packages with near zero bond line thickness (BLT) without using TSVs, achieved by directly coupling semiconductor devices using metal bumps and metallization structures, allowing for face-to-face and face-to-back stacking configurations and eliminating the need for TSVs in both base and device packages.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If through-silicon vias (TSVs) are used for vertical stacking, then electrical interconnection between stacked dies is achieved, but package thickness increases and processing complexity increases
Solution Approach 1:
The patent extracts and eliminates the TSV structure from the stacking process. Instead of forming through-silicon vias that penetrate the entire substrate thickness, the invention uses direct die-to-die bonding with metal bumps that create electrical interconnection without requiring deep via formation, thereby reducing package thickness while maintaining electrical connectivity
Solution Approach 2:
The patent inverts the conventional stacking approach by eliminating the need for TSVs entirely. Rather than creating vertical pathways through the substrate and then filling them with conductors, the invention directly bonds dies together using metal bumps formed on the die surfaces, reversing the traditional sequence and approach of vertical interconnection
2Reliability
If through-silicon vias (TSVs) are used for vertical stacking, then electrical interconnection between stacked dies is achieved, but processing steps increase
Solution Approach 1:
The patent removes the complex TSV formation process from the manufacturing sequence. By eliminating photolithography steps for via patterning, etching steps for via formation, and conductor filling steps, the invention significantly reduces processing complexity while achieving the same electrical interconnection function through direct die bonding
Solution Approach 2:
The patent inverts the conventional approach by forming metal bumps directly on die surfaces before bonding, rather than forming vias through the substrate after bonding. This reversal eliminates multiple photolithography and etching steps, simplifying the overall processing sequence while maintaining reliable electrical interconnection
3Shape
If conventional stacking methods are used, then vertical stacking is achieved, but bond line thickness increases
Solution Approach 1:
The patent employs extremely thin bonding interfaces between stacked dies, achieving near-zero bond line thickness. The direct die-to-die bonding with metal bumps creates minimal separation distance between dies, effectively using thin film bonding techniques to eliminate thick bond lines while maintaining mechanical and electrical integrity of the stacked structure
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables more dense and compact semiconductor device packages with reduced vertical dimensions, simplifying the manufacturing process and eliminating the need for TSV formation, which is beneficial for creating smaller, more efficient semiconductor devices.
Implementation Method 1
directly coupling semiconductor devices using metal bumps and metallization structures
Implementation Method 2
metallization structures, allowing for face-to-face and face-to-back stacking configurations
Data Source
AI summary
Semiconductor device package assemblies and associated methods are disclosed herein. In some embodiments, the semiconductor device package assembly includes (1) a base component having a front side and a back side opposite the first side, the base component having a first metallization structure at the front side, the first metallization structure being exposed in a contacting area at the front side; (2) a semiconductor device package having a first side and a second side, the semiconductor device package having a second metallization structure at the first side; and (3) a metal bump at least partially positioned in the recess and electrically coupled to the second metallization structure and the first metallization structure.