3D Thin-Film Transistor Structure for High-Aperture LCD Arrays
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Solution Overview
Problem
Current liquid crystal display devices face challenges in achieving high aperture ratios and stable electrical characteristics for thin film transistors, which affect image quality and resolution.
Innovation Solution
The design of an array substrate with a specific transistor structure, including a structural member with an inclined surface, a gate electrode disposed along this surface, and semiconductor members contacting source and drain electrodes, allows for a minimized horizontal area of the transistor, maximizing aperture ratio and ensuring sufficient channel length for stable electrical performance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Area of moving object
If the transistor horizontal area is reduced to increase aperture ratio, then the aperture ratio is improved, but the channel length becomes insufficient leading to unstable electrical characteristics
Solution Approach 1:
The patent applies dimensionality change by configuring the semiconductor member and channel to extend in the vertical direction (z-axis) utilizing the thickness dimension, rather than only in the horizontal plane. The channel has a first portion extending in the horizontal direction and a second portion extending in the vertical direction, allowing the effective channel length to increase without increasing the horizontal footprint of the transistor, thus resolving the contradiction between aperture ratio and electrical characteristics stability.
2Area of moving object
If the gate electrode is disposed on the lateral surface of the structural member, then the horizontal area is minimized, but the manufacturing complexity increases
Solution Approach 1:
The patent segments the channel into multiple portions (first portion and second portion) with different orientations, and correspondingly segments the gate electrode into portions disposed at different locations (on the lateral surface and on the upper surface). This segmentation allows the gate electrode to conform to the three-dimensional structure while maintaining manufacturability through standardized deposition and patterning processes applied to different surface regions.
3Reliability
If the semiconductor member extends along the inclined surface, then the channel length is sufficient for stable electrical characteristics, but the manufacturing precision requirements increase
Solution Approach 1:
The patent employs preliminary action by first forming the structural member with its inclined lateral surface, then using this pre-formed structure as a template or guide for subsequent deposition of the semiconductor member and gate electrode. The inclined surface of the structural member naturally defines the orientation and position of the channel, reducing the need for high-precision alignment during later manufacturing steps and lowering overall manufacturing precision requirements.
Data Source
AI summary
A transistor structure may include a first electrode, a second electrode, a third electrode, a substrate, and a semiconductor member. The semiconductor member overlaps the third electrode and includes a first semiconductor portion, a second semiconductor portion, and a third semiconductor portion. The first semiconductor portion directly contacts the first electrode, is directly connected to the third semiconductor portion, and is connected through the third semiconductor portion to the second semiconductor portion. The second semiconductor portion directly contacts the second electrode and is directly connected to the third semiconductor portion. A minimum distance between the first semiconductor portion and the substrate is unequal to a minimum distance between the second semiconductor portion and the substrate.