3D Thermal Dissipation Structure for Stacked IC Hot Spots
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Solution Overview
Problem
3D semiconductor devices face challenges with thermal dissipation due to the low thermal conductivity of molding compounds and dielectric materials, leading to heat being trapped and causing hot spots, which can negatively affect electrical performance and reliability.
Innovation Solution
The implementation of a thermal dissipation structure that extends from one semiconductor structure to a cooling structure, routed around active devices and thermally coupled to the cooling medium, using vias and interconnects to conduct heat effectively, even for devices far from the cooling medium.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If chip density is increased in 3D semiconductor devices, then functional density and production efficiency are improved, but heat dissipation performance deteriorates and hot spots are generated
Solution Approach 1:
The patent introduces vertical thermal dissipation pathways through stacked semiconductor structures with thermal dissipation structures extending from lower to upper dies. This multi-dimensional heat conduction approach moves heat away from the traditional planar dissipation path, enabling effective thermal management in high-density 3D configurations by utilizing the vertical dimension for heat transport.
Solution Approach 2:
The patent employs thermal dissipation structures as intermediary elements between heat-generating active devices and cooling structures. These intermediate thermal pathways, including thermal vias and conductive layers, facilitate heat transfer from inner dies to outer dies and ultimately to cooling structures, resolving the thermal bottleneck in high-density stacking.
2Temperature
If thermal dissipation structures are added to conduct heat away from active devices, then heat dissipation performance is improved, but device complexity increases
Solution Approach 1:
The patent designs thermal dissipation structures that serve multiple functions: thermal vias provide both electrical interconnections and thermal conduction pathways, while conductive layers simultaneously function as interconnect structures and heat spreaders. This multi-functionality reduces the need for separate dedicated thermal management components, thereby limiting the increase in overall device complexity.
Solution Approach 2:
The patent merges thermal dissipation functions with existing semiconductor interconnect structures. Thermal pathways are integrated into the interconnect layer stack, combining heat conduction and electrical connection functions into unified structures, which minimizes additional complexity compared to adding separate thermal management systems.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This solution enhances heat dissipation in 3D semiconductor devices, reducing the risk of hot spots and improving the electrical performance and reliability of stacked semiconductor structures by effectively conducting heat away from the active devices to the cooling medium.
Implementation Method 1
a thermal dissipation structure having a first portion partially through the first IC and a second portion fully through the second semiconductor structure and exposed at the second surface of the second semiconductor structure
Data Source
AI summary
An integrated semiconductor device is provided. The integrated semiconductor device includes a first semiconductor structure having a first IC, and a second semiconductor structure stacked above the first semiconductor structure and having a second IC. The second semiconductor structure has a first surface facing the first semiconductor structure and a second surface facing away from the first semiconductor structure. The integrated semiconductor device also includes a thermal dissipation structure having a first portion partially through the first IC and a second portion fully through the second semiconductor structure and exposed at the second surface of the second semiconductor structure. The second portion may be outside of the second IC.