3D Trench Capacitor Packaging for High-Density Semiconductor Packages
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Solution Overview
Problem
Existing semiconductor packaging technologies face challenges in achieving smaller sizes and higher integration densities, particularly with integrated passive devices, due to limitations in capacitance density and manufacturing processes that lead to void formation and reduced electrode surface area in trench capacitors.
Innovation Solution
The implementation of a 3D trench capacitor structure, where 2D trench capacitors are connected in parallel across multiple device layers, increasing capacitance density by enhancing the depth of trench segments and using fusion bonding to mitigate alignment issues, thereby reducing the overall footprint and maintaining high capacitance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If traditional 2D trench capacitor structures are used, then manufacturing process is simpler, but capacitance density is limited and electrode surface area is reduced due to void formation
Solution Approach 1:
The patent transitions from traditional 2D trench capacitor structures to a 3D configuration by adding vertical stacking of multiple capacitor layers. This dimensional change increases the electrode surface area and capacitance density without significantly complicating the manufacturing process, as the 3D structure builds upon existing 2D fabrication capabilities with additional layer deposition and patterning steps.
2Quantity of substance
If trench depth is increased to improve capacitance density, then capacitance increases, but void formation and manufacturing difficulties increase
Solution Approach 1:
The patent divides the single deep trench capacitor into multiple shallower trench capacitors stacked vertically. Each individual trench maintains manufacturable dimensions while the collective stack achieves the desired total capacitance. This segmentation eliminates void formation issues associated with deep single trenches and reduces manufacturing precision requirements for each individual trench while maintaining overall high capacitance density.
3Area of stationary object
If multiple capacitor layers are stacked to increase capacitance density, then footprint is reduced, but alignment precision requirements increase
Solution Approach 1:
The patent combines multiple capacitor layers into a single integrated 3D trench capacitor structure that functions as one unified component. This merging approach reduces the need for precise alignment between separate layers, as the capacitors are formed in a coordinated manner within the same structural framework, thereby achieving high capacitance density in a small footprint without imposing stringent alignment precision requirements.
Data Source
AI summary
Disclosed are semiconductor packages and semiconductor devices. In one embodiment, a semiconductor package includes a package, a first integrated passive device, and a second integrated passive device. The first integrated passive device is disposed below the package. The second integrated passive device is disposed between the package and the first integrated passive device. The first integrated passive device is electrically connected to the package through the second integrated passive device.