3D Semiconductor TSV Layout With Unequal Via Areas
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Solution Overview
Problem
The development of 3D semiconductor packages requires a stable TSV (Through Silicon Via) structure to improve performance and reliability, but existing techniques struggle to achieve this.
Innovation Solution
A semiconductor device is designed with a substrate having first and second sides, featuring a first penetrating structure and a second penetrating structure, where the area of the first penetrating structure is more than twice the area of the second penetrating structure on the first side of the substrate, along with a connecting part that links the penetrating parts to form through via structures.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If through via structures with varying sizes are formed to improve signal transmission and reduce power consumption, then reliability and performance are improved, but manufacturing complexity increases
Solution Approach 1:
The through via structures are segmented into multiple penetrating parts (first-1, first-2, second-1, second-2 penetrating parts) with different areas, where each penetrating part can be independently formed and controlled. This segmentation allows for varying sizes within the same through via structure, enabling optimized signal transmission paths for different electrical connections while maintaining manufacturing feasibility through standardized formation processes.
Solution Approach 2:
Different penetrating parts within the through via structures are assigned different areas based on their specific functional requirements. The first penetrating structure has a larger area than the second penetrating structure, allowing for optimized current carrying capacity and signal transmission characteristics in different regions of the substrate, thereby improving overall reliability without requiring complete redesign of all via structures.
2Use of energy by moving object
If multiple penetrating parts with different areas are created, then power consumption is reduced and signal transmission is improved, but the number of manufacturing steps increases
Solution Approach 1:
The via insulating films are formed in advance within the penetrating parts before the barrier films and core plugs are added. This preliminary formation of insulating layers allows for better control of the subsequent filling processes and ensures proper insulation is established before electrical connections are made, facilitating the creation of multi-sized penetrating parts through a systematic sequence of operations rather than requiring separate processes for each size variation.
Solution Approach 2:
The through via structures employ a nested configuration where the via insulating film is interposed between the barrier film and the substrate, and the core plug is surrounded by the barrier film. This nested arrangement of multiple layers (substrate, via insulating film, barrier film, core plug) within each penetrating part allows for standardized formation processes that can accommodate different penetrating part areas without requiring fundamentally different manufacturing approaches, thus reducing overall manufacturing complexity.
Data Source
AI summary
A semiconductor device includes a substrate including a first side and a second side opposite to each other, a first penetrating structure that penetrates the substrate, and a second penetrating structure that penetrates the substrate, the second penetrating structure being spaced apart from the first penetrating structure, and an area of the first penetrating structure being more than twice an area of the second penetrating structure, as viewed from the first side of the substrate.