3D Via Stack Laminate for Fine-Pitch SoC Interconnects

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Solution Overview

Problem

Existing 3D integrated circuit technologies face challenges in achieving high functionality, block density, and smaller form factor with efficient interconnects, while also being cost-effective and reducing packaging cycle time.

Innovation Solution

The method involves forming layers of packaging laminate substrate material with precise vias to create a fine via stack laminate that allows for direct via-to-via connections between systems on chip, using a pitch of 40 to 80 micrometers, enabling face-to-face bonding with fine pitch interconnects and reducing reliance on redistribution layers.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Device complexity

If conventional 3D IC technologies are used, then interconnect functionality is achieved, but device complexity and packaging cycle time increase

Engineering Contradiction:
Improvepackaging structure complexityVSAvoidpackaging cycle time
Core Design Contradiction:
Device complexityVSProductivity

Solution Approach 1:

The patent transitions from conventional 2D packaging to 3D stacked architecture, where multiple substrate layers are vertically integrated with vias penetrating through layers to create direct interconnects. This dimensional change enables shorter signal paths and reduced packaging complexity despite increased vertical integration

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

Solution Approach 2:

The packaging structure is divided into multiple discrete substrate layers (first substrate layer, second substrate layer) that can be manufactured and processed separately, then integrated through via formation and bonding. This segmentation allows parallel processing and reduces overall packaging cycle time

Inventive Principle:
Principle #1Segmentation

2Adaptability or versatility

If fine pitch interconnects are implemented, then bandwidth and functionality are improved, but manufacturing precision requirements increase

Engineering Contradiction:
Improveinterconnect bandwidthVSAvoidvia pitch precision
Core Design Contradiction:
Adaptability or versatilityVSManufacturing precision

Solution Approach 1:

Vias are formed in the substrate layers before final bonding and assembly. This preliminary via formation allows precise positioning and alignment to be established early in the manufacturing process, ensuring fine pitch accuracy is maintained through subsequent processing steps

Inventive Principle:
Principle #10Preliminary action

Solution Approach 2:

The substrate layers act as intermediary structures that provide mechanical support and alignment references for the fine pitch via interconnects. These intermediaries enable precise via positioning while maintaining manufacturability through standard fabrication processes

Inventive Principle:
Principle #24Intermediary (Mediator)

3Length of moving object

If direct via-to-via connections are used, then signal escape length is reduced, but via formation complexity increases

Engineering Contradiction:
Improvesignal escape lengthVSAvoidvia formation process complexity
Core Design Contradiction:
Length of moving objectVSDevice complexity

Solution Approach 1:

Signal interconnects transition from lateral routing in 2D planes to vertical routing through stacked substrate layers. This dimensional change creates direct via-to-via connections that minimize signal escape length by eliminating unnecessary lateral signal paths

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

4Volume of moving object

If smaller form factor is achieved, then device density is improved, but manufacturing difficulty increases

Engineering Contradiction:
Improvedevice form factorVSAvoidstacking process difficulty
Core Design Contradiction:
Volume of moving objectVSEase of manufacture

Solution Approach 1:

The device is segmented into multiple thin substrate layers that can be manufactured using standard thin-film fabrication processes. These segmented layers are then stacked vertically, achieving compact form factor while maintaining ease of manufacture through modular processing

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The device architecture transitions from horizontal expansion to vertical stacking, achieving smaller footprint by utilizing the z-dimension. Multiple functional layers are stacked with via interconnects, compacting the form factor without complicating manufacturing

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

Data Source

PatentUS20250210528A1Systems and methods for 3D integration
Publication Date: 2025.06.26 META PLATFORMS TECHNOLOGIES LLC
  • US20250210528A1 patent drawing
  • US20250210528A1 patent drawing
  • US20250210528A1 patent drawing

AI summary

A method for 3D integration may include forming a first layer of packaging laminate substrate material including a first plurality of vias formed therein. The method may additionally include forming a second layer of packaging laminate substrate material having a second plurality of vias formed therein. The method may also include stacking the first plurality of vias with the second plurality of vias. Various other methods, systems, and computer-readable media are also disclosed.