3DIC Hybrid Bonding Blocking Layer Prevents Metal Diffusion
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Solution Overview
Problem
Three-dimensional integrated circuits (3DICs) face challenges with metal element diffusion from metal pads into bonding dielectric layers, leading to leakage current issues during the hybrid bonding process.
Innovation Solution
Incorporating a blocking layer, made from materials like manganese oxide, manganese silicate, or cobalt oxide, between the hybrid bonding dielectric and metal layers to prevent metal element diffusion, with a thickness between 0.5 nm and 1.0 nm, effectively suppressing leakage current.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Strength
If hybrid bonding is performed without a blocking layer, then bonding strength is improved, but metal element diffusion occurs causing leakage current
Solution Approach 1:
A blocking layer comprising manganese oxide (MnO), manganese silicate (MnSiO), or manganese oxynitride (MnON) is introduced between the bonding dielectric layer and bonding metal layer. This intermediary layer prevents metal element diffusion from the metal pad into the bonding dielectric layer during hybrid bonding, thereby eliminating leakage current while preserving bonding strength.
Solution Approach 2:
The harmful metal element diffusion process is extracted and blocked by introducing a dedicated blocking layer. This layer specifically targets and prevents the diffusion of metal elements (such as copper) from the metal pad into the bonding dielectric layer, separating the bonding function from the diffusion prevention function.
2Reliability
If a blocking layer is added between bonding dielectric layer and bonding metal layer, then leakage current is suppressed, but device complexity increases
Solution Approach 1:
The blocking layer is designed with specific material compositions (manganese oxide, manganese silicate, or manganese oxynitride) and controlled thickness (5-50 nm) to achieve effective diffusion blocking. By optimizing these parameters, the layer provides reliable leakage current suppression while maintaining compatibility with existing hybrid bonding processes.
3Object-affected harmful factors
If blocking layer thickness is increased, then diffusion prevention is improved, but manufacturing precision requirements increase
Solution Approach 1:
The blocking layer thickness is optimized to a specific range of 5-50 nm, which provides sufficient diffusion barrier functionality while remaining compatible with standard thin film deposition processes. This parameter range balances diffusion prevention effectiveness with manufacturability, avoiding excessively thin layers that would fail to block diffusion and excessively thick layers that would be difficult to manufacture with precise control.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The blocking layer effectively prevents metal element diffusion from metal pads into the bonding dielectric layer, thereby reducing leakage current and enhancing the reliability of 3DICs.
Implementation Method 1
disposing the blocking layer between the hybrid bonding dielectric layer and the hybrid bonding metal layer to suppress the metal element of the metal pad from diffusing into the bonding dielectric layer
Data Source
AI summary
Provided are a three-dimensional integrated circuit (3DIC) and a method of manufacturing the same. The 3DIC includes a first wafer, a second wafer, and a hybrid bonding structure. The second wafer is bonded to the first wafer by the hybrid bonding structure. The hybrid bonding structure includes a blocking layer between a hybrid bonding dielectric layer and a hybrid bonding metal layer.