3DIC Die Bonding Structure With Floating Dummy Pads
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Solution Overview
Problem
Challenges in the fabrication of three-dimensional integrated circuits (3DICs) include the need for efficient and cost-effective methods to align and bond semiconductor dies, particularly in reducing the complexity and cost of forming via holes and bonding structures while maintaining electrical connectivity and structural integrity.
Innovation Solution
The use of a single damascene process to form via holes and active bonding vias in semiconductor dies, combined with hybrid bonding techniques that include metal-to-metal and dielectric-to-dielectric bonding, to create a 3DIC structure with smooth sidewalls and reduced loading effects during planarization, allowing for precise alignment and electrical connectivity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional multi-step processes are used to form via holes and bonding structures, then electrical connectivity and structural integrity are achieved, but manufacturing complexity and cost increase
Solution Approach 1:
The patent combines multiple process steps into a single damascene process that simultaneously forms via holes and active bonding vias. This merging of operations reduces manufacturing complexity while maintaining the required electrical connectivity and structural integrity through integrated pattern formation and material deposition
Solution Approach 2:
The single damascene process serves multiple functions: it creates via holes for electrical connection, forms active bonding vias for die attachment, and establishes conductive pathways all in one manufacturing sequence. This multi-functionality reduces the number of separate process modules required
2Manufacturing precision
If multiple process steps are used for via hole formation, then precise alignment is achieved, but manufacturing time and cost increase
Solution Approach 1:
The patent performs preliminary patterning and material deposition during the single damascene process to pre-establish the positions and geometries of via holes and bonding vias. This preliminary action within the integrated process ensures precise alignment is achieved before subsequent bonding operations without requiring additional separate alignment steps
3Strength
If complex bonding structures are formed, then structural integrity is ensured, but manufacturing cost and process complexity increase
Solution Approach 1:
The patent merges the formation of structural support elements and electrical conductors into a single damascene process. By combining these functions in one manufacturing sequence, the process reduces overall complexity and cost while ensuring structural integrity through integrated material deposition and pattern formation
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method enhances the efficiency and reduces the cost of forming 3DICs by minimizing the complexity of via hole formation and bonding, ensuring reliable electrical connections and structural integrity, thereby improving yield and reducing manufacturing costs.
Implementation Method 1
a first bonding dielectric layer over the first die
Implementation Method 2
hybrid bonding techniques that include metal-to-metal and dielectric-to-dielectric bonding
Data Source
AI summary
A semiconductor structure includes a first die and a plurality of first dummy pads. The first die includes a first interconnect structure and a first active pad electrically connected to the first interconnect structure. The first dummy pads laterally surround the first active pad and are electrically floating.