3DIC Bonding Via Structure With Inclined Sidewalls for Die Alignment
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Solution Overview
Problem
The semiconductor industry faces challenges in forming efficient three-dimensional integrated circuits (3DICs) due to issues in aligning and bonding semiconductor dies, which affect integration density, speed, and bandwidth.
Innovation Solution
A method involving the formation of smooth, inclined via holes and bonding vias using a single damascene process, followed by hybrid bonding techniques to align and connect semiconductor dies, ensuring precise electrical connections.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If hybrid bonding techniques are used to align and connect semiconductor dies, then integration density and electrical connectivity are improved, but manufacturing complexity increases
Solution Approach 1:
The patent applies preliminary action by forming via holes with inclined sidewalls before the bonding process. This pre-shaping of the via holes facilitates easier alignment and bonding during the hybrid bonding process, as the inclined walls provide mechanical guidance and tolerance compensation. The via holes are prepared in advance with specific geometric characteristics that will aid the subsequent bonding operation, rather than attempting to correct alignment issues during bonding itself.
Solution Approach 2:
The patent employs parameter changes by modifying the geometry of via holes from vertical to inclined sidewalls. This geometric parameter change improves the bonding process by providing better mechanical interlocking and alignment tolerance. The inclined sidewall angle is specifically controlled to optimize both the bonding process and the final electrical connectivity, demonstrating how changing a key geometric parameter can resolve the contradiction between improved bonding and increased complexity.
2Manufacturing precision
If via holes with inclined sidewalls are formed using single damascene process, then manufacturing precision is improved, but process complexity increases
Solution Approach 1:
The patent applies merging by combining multiple functions into the single damascene process. Instead of separately forming via holes, adding sidewall structures, and performing alignment features, the inclined sidewall via holes are created in a single etching and filling operation. This consolidation achieves precise via hole geometry and alignment features simultaneously, improving manufacturing precision while actually reducing the number of discrete process steps despite the increased complexity of the individual steps.
Data Source
AI summary
A method of manufacturing a semiconductor structure includes the following steps. A die is provided. The die includes an interconnect structure and an active pad electrically connected to the interconnect structure. A dielectric layer is formed over the die, wherein the dielectric layer is a single layer. An active bonding via is formed in the dielectric layer. The active pad has a first surface facing the interconnect structure and a second surface opposite to the first surface, the active bonding via has a third surface facing the interconnect structure and a fourth surface opposite to the third surface, and the second surface of the active pad is disposed between the third surface and the fourth surface of the active bonding via.