3DIC Gap-Fill Structures Using Thermal Conduction Paths
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Solution Overview
Problem
High integration levels in integrated circuit packages lead to heat dissipation issues and warpage due to material differences, causing non-bond issues and circuit failures.
Innovation Solution
The implementation of gap-fill structures with high thermal conductivity materials, such as amorphous silicon or III-V semiconductors, to enhance heat dissipation and reduce stress and warpage in the package.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If high integration level is implemented to increase functionality, then device functionality is improved, but heat dissipation becomes severe and warpage occurs
Solution Approach 1:
A gap-fill structure is introduced as an intermediary component between device dies and package substrates. This gap-fill structure includes a gap-fill region with material having higher thermal conductivity than the surrounding dielectric material, serving as a thermal pathway to conduct heat away from the device dies, thereby resolving the heat dissipation issue while maintaining high integration functionality
2Adaptability or versatility
If high integration level is implemented to increase functionality, then device functionality is improved, but warpage occurs due to material differences
Solution Approach 1:
The thermal conductivity parameter of the gap-fill material is changed to be higher than the surrounding dielectric material. This parameter change enables the gap-fill structure to act as a thermal pathway, conducting heat away from device dies and reducing thermal stress that causes warpage, thereby maintaining package flatness while achieving high integration functionality
3Temperature
If gap-fill structures with high thermal conductivity materials are implemented to improve heat dissipation, then heat dissipation is improved, but device complexity increases
Solution Approach 1:
The gap-fill structure serves multiple functions simultaneously: it fills physical gaps between device dies and package substrates, provides thermal conduction pathways for heat dissipation, and acts as a stress compensation layer to reduce warpage. By combining these functions into a single structure, the patent improves heat dissipation without proportionally increasing device complexity
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The proposed solution effectively improves heat dissipation and reduces stress and warpage in integrated circuit packages, addressing the issues of non-bond and circuit failure.
Implementation Method 1
the gap-fill layer has a first thermal conductivity value higher than a second thermal conductivity value of silicon oxide
Data Source
AI summary
A method includes bonding a top die to a bottom die, depositing a first dielectric liner on the top die, and depositing a gap-fill layer on the first dielectric liner. The gap-fill layer has a first thermal conductivity value higher than a second thermal conductivity value of silicon oxide. The method further includes etching the gap-fill layer and the first dielectric liner to form a through-opening, wherein a metal pad in the bottom die is exposed to the through-opening, depositing a second dielectric liner lining the through-opening, filling the through-opening with a conductive material to form a through-via connecting to the metal pad, and forming a redistribution structure over and electrically connecting to the top die and the through-via.