3DIC Interfacial Layer Structure for Better Heat Dissipation
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Conventional intermetal dielectric materials in three-dimensional integrated circuits (3DICs) face challenges in thermal management due to low thermal conductivity, which can impact performance and reliability, especially during high-temperature substrate stacking.
Innovation Solution
Incorporating a thermal conductive layer with higher thermal conductivity than traditional dielectric materials, such as SiC, SiN, SiCN, AlN, AlO, BN, diamond, diamond-like carbon, graphene oxide, or graphite, to enhance thermal dissipation and bonding efficiency in 3DICs.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional intermetal dielectric materials such as SiO2 are used in 3DICs, then the device structure is simple and easy to manufacture, but the thermal conductivity is low which negatively impacts thermal management and reliability at high temperature
Solution Approach 1:
The patent changes the thermal conductivity parameter of the dielectric material by selecting materials with progressively higher thermal conductivity values (SiO2: 1.4 W/mK, SiN: 150 W/mK, SiC: 490 W/mK, diamond: 2200 W/mK). This parameter change directly addresses the thermal management performance while maintaining compatibility with existing semiconductor manufacturing processes
Solution Approach 2:
The patent employs composite material structures where high-thermal-conductivity layers (such as SiC or diamond) are integrated with conventional dielectric materials. This creates a composite dielectric system that combines the electrical insulation properties of traditional materials with the superior thermal conductivity of advanced materials, resolving the contradiction between ease of manufacture and thermal performance
2Productivity
If more devices are integrated into one chip to increase circuit density, then the integration density improves, but the design complexity increases requiring more complex designs
Solution Approach 1:
The patent transitions from two-dimensional planar integration to three-dimensional vertical integration by stacking multiple device layers and interconnect levels. This dimensional change enables significantly higher circuit density by utilizing the vertical space above the substrate, thereby increasing productivity without proportionally increasing design complexity through established 3DIC methodologies
3Productivity
If two chips or substrates are bonded together to form 3DICs, then the three-dimensional integration is achieved, but the bonding process becomes complex and thermal management challenges arise
Solution Approach 1:
The patent incorporates thermal conductive layers and thermal management structures during the initial device fabrication stage, before the bonding process. This preliminary action ensures that thermal pathways are already established in each individual chip or substrate, simplifying the subsequent bonding process and reducing the complexity of thermal management in the final 3DIC structure
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The increased thermal conductivity of the thermal conductive layer improves thermal management and bonding processes in 3DICs, leading to enhanced performance and reliability by effectively dissipating heat and facilitating more efficient bonding.
Implementation Method 1
a first thermal conductive layer disposed on the first dielectric layer... a second thermal conductive layer disposed on the first thermal conductive layer
Data Source
AI summary
An interfacial structure, along with methods of forming such, are described. The structure includes a first interfacial layer having a first dielectric layer, a first conductive feature disposed in the first dielectric layer, and a first thermal conductive layer disposed on the first dielectric layer. The structure further includes a second interfacial layer disposed on the first interfacial layer. The second interfacial layer is a mirror image of the first interfacial layer with respect to an interface between the first interfacial layer and the second interfacial layer. The second interfacial layer includes a second thermal conductive layer disposed on the first thermal conductive layer, a second dielectric layer disposed on the second thermal conductive layer, and a second conductive feature disposed in the second dielectric layer.