3DIC Interfacial Structure With Thermal Conductive Bonding Layers
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
The semiconductor industry faces challenges in achieving higher integration density in three-dimensional integrated circuits (3DICs) due to thermal management issues, particularly with conventional intermetal dielectric (IMD) materials like SiO2, which have low intrinsic thermal conductivity.
Innovation Solution
The introduction of thermal conductive layers with higher thermal conductivity than traditional dielectric materials, such as SiC, SiN, SiCN, AlN, AlOx, BN, diamond, diamond-like carbon, graphene oxide, or graphite, is used to improve thermal management in 3DICs. These layers are integrated into the interfacial structure during the bonding process of 3DICs, enhancing thermal dissipation and bonding efficiency.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Temperature
If conventional intermetal dielectric (IMD) materials such as SiO2 are used in 3DIC bonding, then the bonding process can be simplified, but thermal management performance deteriorates due to low intrinsic thermal conductivity
Solution Approach 1:
The patent changes the thermal conductivity parameter of the dielectric layer by replacing conventional SiO2 materials with advanced materials such as diamond-like carbon (DLC), cubic boron nitride (c-BN), or graphite. These materials maintain the dielectric function while providing significantly higher thermal conductivity, thus resolving the thermal management issue in 3DIC bonding without complicating the bonding process
Solution Approach 2:
The patent employs composite material structures where a thin layer of high-thermal-conductivity material (such as DLC or c-BN) is integrated within or alongside the conventional dielectric layer. This composite approach combines the electrical insulation properties of traditional dielectrics with the superior thermal conduction of advanced materials, achieving both reliable bonding and effective thermal management
2Productivity
If more devices are integrated into one chip to increase circuit density, then integration density improves, but design complexity increases
Solution Approach 1:
The patent enables three-dimensional integration by improving thermal management at the dielectric layer, which is critical for stacking multiple devices vertically. By solving the thermal conduction problem in the vertical dimension, the patent facilitates 3DIC architectures that increase integration density without proportionally increasing lateral design complexity
3Temperature
If thermal conductive layers with higher thermal conductivity are introduced to improve thermal management, then thermal dissipation improves, but the bonding process complexity increases
Solution Approach 1:
The patent incorporates the high-thermal-conductivity dielectric layer during the initial wafer fabrication process, before the 3DIC bonding occurs. This preliminary integration ensures that the thermal management capability is built-in from the start, eliminating the need for additional thermal interface materials or complex post-bonding thermal modification steps
Solution Approach 2:
The patent designs the dielectric layer to serve multiple functions simultaneously: electrical insulation between conductive features, mechanical support during bonding, and thermal conduction path for heat dissipation. By making the dielectric layer multi-functional, the patent avoids adding separate components that would increase bonding process complexity
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The increased thermal conductivity of the thermal conductive layers significantly improves thermal management capabilities for wafer stacking or die stacking, leading to enhanced thermal dissipation and a more efficient bonding process, which is critical for achieving higher integration densities in 3DICs.
Implementation Method 1
thermal conductive layers with higher thermal conductivity than traditional dielectric materials... significantly improves thermal management capabilities... enhancing thermal dissipation
Data Source
AI summary
An interfacial structure, along with methods of forming such, are described. The structure includes a first interfacial layer having a first dielectric layer, a first conductive feature disposed in the first dielectric layer, and a first thermal conductive layer disposed on the first dielectric layer. The structure further includes a second interfacial layer disposed on the first interfacial layer. The second interfacial layer is a mirror image of the first interfacial layer with respect to an interface between the first interfacial layer and the second interfacial layer. The second interfacial layer includes a second thermal conductive layer disposed on the first thermal conductive layer, a second dielectric layer disposed on the second thermal conductive layer, and a second conductive feature disposed in the second dielectric layer.