3DIC Package Thermal Dissipation Structure With Embedded Heat Path

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Solution Overview

Problem

Heat dissipation is a challenge in Three-Dimensional Integrated Circuits (3DICs) due to inefficiencies in dissipating heat generated within the semiconductor dies.

Innovation Solution

A thermal dissipation structure is integrated into the package structure, comprising a semiconductor substrate with embedded conductive vias and a thermal transmission path, along with capacitors and bonding vias to enhance heat dissipation.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Quantity of substance

If semiconductor dies are stacked through bonding to form 3DICs, then integration density is improved, but heat dissipation efficiency deteriorates

Engineering Contradiction:
Improveintegration densityVSAvoidheat dissipation efficiency
Core Design Contradiction:
Quantity of substanceVSTemperature

Solution Approach 1:

The patent introduces through-silicon vias (TSVs) that extend vertically through the semiconductor substrate, creating three-dimensional thermal conduction pathways. This dimensional transformation allows heat to be dissipated from internal die layers to external heat sinks, resolving the thermal management challenge inherent in 3D stacked architectures while maintaining high integration density.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

Solution Approach 2:

The patent employs thermal interface materials and heat spreader layers as intermediary structures between the semiconductor dies and external cooling systems. These intermediary components facilitate efficient thermal energy transfer across interfaces, addressing the heat dissipation bottleneck in 3DICs without compromising the stacked die configuration.

Inventive Principle:
Principle #24Intermediary (Mediator)

2Temperature

If thermal dissipation structures are added to improve heat dissipation, then thermal management is improved, but device complexity increases

Engineering Contradiction:
Improvethermal managementVSAvoidstructure complexity
Core Design Contradiction:
TemperatureVSDevice complexity

Solution Approach 1:

The through-silicon via structures serve dual purposes: they provide electrical interconnections between stacked dies and simultaneously function as thermal conduction pathways. This multi-functionality allows the same structural elements to address both electrical connectivity and thermal management needs, improving heat dissipation without proportionally increasing device complexity.

Inventive Principle:
Principle #6Universality (Multi-functionality)

Solution Approach 2:

The patent merges the electrical interconnect function and thermal conduction function into unified structures. By integrating heat dissipation pathways with existing electrical interconnect architectures, the design achieves effective thermal management while minimizing additional structural complexity.

Inventive Principle:
Principle #5Merging (Combining)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The structure effectively dissipates heat through a thermal transmission path, improving the thermal management of 3DICs and maintaining electrical connectivity.

Implementation Method 1

a thermal transmission path, along with capacitors and bonding vias to enhance heat dissipation

Methodology Applied
Scientific EffectThermal conduction: Conduction (thermal)

Data Source

PatentUS12431366B2Structure having thermal dissipation structure therein and manufacturing method thereof
Publication Date: 2025.09.30 TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD
  • US12431366B2 patent drawing
  • US12431366B2 patent drawing
  • US12431366B2 patent drawing

AI summary

A package structure includes a first thermal dissipation structure. The first thermal dissipation structure includes a semiconductor substrate, conductive vias, a thermal transmission structure, first capacitors, bonding pads, and bonding vias. The conductive vias are embedded in the semiconductor substrate. The thermal transmission structure is disposed over the semiconductor substrate and the conductive vias. The thermal transmission structure includes a conductive plane. The first capacitors are at least partially embedded in the thermal transmission structure. The bonding pads and the bonding vias are embedded in the thermal transmission structure. The bonding vias electrically connect the conductive vias and the bonding pads. The conductive plane is in physical contact with sidewalls of at least one of the bonding pads.