3DIC Thermal Silicon Substrate Layout for Heat Dissipation
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Solution Overview
Problem
3D integrated circuit (3DIC) solutions face challenges in thermal management, power delivery, and yield in integrating heterogeneous chips with different sizes and functionalities, particularly in advanced packaging technologies like SoIC, which are crucial for high-performance computing applications.
Innovation Solution
A method for fabricating SoIC structures involving the use of thermal silicon substrates laterally spaced from semiconductor dies, encapsulated by a patterned dielectric filling material, with a metal layer providing thermal and electrical connections, and a redistribution circuit structure for enhanced heat dissipation and signal transmission.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Temperature
If thermal silicon substrates are laterally spaced from semiconductor dies to improve heat dissipation, then thermal management is improved, but device area increases
Solution Approach 1:
The patent transitions from planar heat dissipation to three-dimensional heat management by stacking thermal silicon substrates vertically above the semiconductor die. This vertical arrangement allows heat to be dissipated through the thickness dimension rather than requiring lateral expansion, resolving the contradiction between improved heat dissipation and minimized device area.
Solution Approach 2:
The thermal silicon substrates are positioned within the vertical profile of the semiconductor device, nesting the thermal management structure within the existing device footprint. The substrates are laterally spaced from the die but vertically integrated, allowing heat dissipation functionality to be nested within the device's three-dimensional structure without increasing lateral dimensions.
2Productivity
If multiple heterogeneous chips are integrated in 3D packaging to increase functionality and density, then productivity and functionality are improved, but thermal management and yield become more difficult
Solution Approach 1:
The patent segments the thermal management function from the computational function by using separate thermal silicon substrates dedicated to heat dissipation. This segmentation allows the heterogeneous chip stack to be optimized for functionality while the thermal substrates are optimized for heat dissipation, resolving the contradiction between high integration density and thermal management.
Solution Approach 2:
The thermal silicon substrates act as intermediary elements between the heterogeneous semiconductor dies and the external environment. These substrates mediate the thermal transfer from multiple stacked chips, providing a dedicated thermal pathway that improves reliability of thermal management without compromising the high integration density of the computational components.
3Adaptability or versatility
If known good dies with different chip sizes are integrated into a single system chip, then adaptability and functionality are improved, but manufacturing precision and alignment become more challenging
Solution Approach 1:
The patent employs a universal bonding interface and standardized thermal substrate design that can accommodate dies of varying sizes and functionalities. The thermal silicon substrates provide a common reference plane and bonding surface that enables precise alignment and integration of heterogeneous dies with different footprints, resolving the contradiction between adaptability and manufacturing precision.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Improves thermal management and yield by ensuring reliable electrical connections and efficient heat dissipation, enhancing the performance and reliability of integrated circuits in compact systems.
Implementation Method 1
a metal layer provided thermal and electrical connections
Implementation Method 2
thermal silicon substrates laterally spaced from the second semiconductor die
Data Source
AI summary
A semiconductor device including a first semiconductor die, a second semiconductor die, thermal silicon substrates and an encapsulation is provided. The second semiconductor die is disposed on and electrically connected to the first semiconductor die. The thermal silicon substrates are disposed on the first semiconductor die, wherein the thermal silicon substrates are spaced apart from the second semiconductor die. The encapsulation is disposed on the first semiconductor die. The encapsulation encapsulates the second semiconductor die and the thermal silicon substrates. The encapsulation includes a filling material layer and an insulator, wherein the filling material layer is disposed on the first semiconductor die and located between the second semiconductor die and thermal silicon substrates, and the filling material layer is spaced apart from the second semiconductor die and the thermal silicon substrates by the insulator.