3×3 Image Sensor Pixel Layout for Lower Signal Noise
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Solution Overview
Problem
Existing image sensors face challenges in reducing signal noise, particularly in the arrangement and interconnection of pixels, which affects image quality.
Innovation Solution
The image sensor incorporates a 3×3 array pixel structure with specific arrangements of transfer transistors, source follower transistors, and selection transistors, along with a deep device isolation structure and color filters, to minimize signal noise.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Object-affected harmful factors
If pixels are arranged in a conventional configuration, then the device complexity is low, but signal noise increases due to interference between adjacent pixels
Solution Approach 1:
The pixel array is divided into 3×3 sub-arrays with deep device isolation structures between them, segmenting the pixel groups to reduce interference and signal noise while maintaining manageable device complexity
Solution Approach 2:
Multiple pixels within each 3×3 sub-array share common transfer transistors, source follower transistors, and selection transistors, merging functions to reduce the number of individual components while effectively reducing signal noise through the isolated sub-array structure
2Manufacturing precision
If transfer transistors are disposed in each pixel, then the manufacturing precision is high, but the device complexity increases
Solution Approach 1:
Transfer transistors, source follower transistors, and selection transistors are shared among multiple pixels within each 3×3 sub-array, reducing the total number of transistors while maintaining precise manufacturing through standardized placement patterns
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration effectively reduces signal noise by optimizing the layout and interconnections of pixels, leading to improved image quality and reduced interference between adjacent pixels.
Implementation Method 1
Each of the pixels includes a photodiode (PD). The photodiode is used to convert an incident light to an electric signal.
Data Source
AI summary
An image sensor including first and second pixel groups, each of which includes first to ninth pixels arranged to form a 3×3 array is disclosed. The image sensor further includes first to ninth transfer transistors disposed in each of the pixel groups to correspond to the first to ninth pixels, respectively, each of the first to ninth transfer transistors including a transfer gate and a floating diffusion region, a selection transistor disposed in at least one of the fourth to sixth pixels in each of the pixel group, and source follower transistors respectively disposed in at least two pixels of the first to third and seventh to ninth pixels in each of the pixel groups. Source follower gates of the source follower transistors may be connected to the floating diffusion region of each of the first to ninth transfer transistors.