Oxide-Covered a-IGZO Detection Substrate Against Hydrogen Diffusion
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Indirect-conversion type X-ray flat panel detectors face instability due to hydrogen atoms diffusing into the channel region of amorphous indium gallium zinc oxide (a-IGZO) Thin Film Transistors during the deposition of the PIN film layer, affecting the performance of the detector.
Innovation Solution
Incorporating an oxide layer that covers the channel regions of the transistors and is insulated from the read electrodes, which reacts with and consumes hydrogen atoms generated during subsequent deposition processes, thereby improving the stability of the transistors and enhancing the performance of the flat panel detector.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If a PIN film layer is deposited on the a-IGZO TFT during fabrication, then the flat panel detector can be manufactured, but hydrogen atoms diffuse into the channel region of the a-IGZO TFT causing poor stability
Solution Approach 1:
An oxide layer is introduced as an intermediary barrier between the a-IGZO TFT channel region and the PIN film layer. This oxide layer prevents hydrogen atoms generated during PIN deposition from diffusing into the channel region, thereby maintaining transistor stability while allowing the fabrication process to proceed.
Solution Approach 2:
The oxide layer is formed in advance on the a-IGZO TFT channel region before the PIN film layer deposition process. This preliminary protective action ensures that when hydrogen atoms are generated during subsequent PIN deposition, they cannot reach and damage the channel region.
2Ease of manufacture
If amorphous silicon (a-Si) TFT is used in the flat panel detector, then the device can be manufactured, but the frame rate and pixel fill rate are low due to low mobility and large intrinsic size
Solution Approach 1:
The transistor material is changed from amorphous silicon (a-Si) to amorphous indium gallium zinc oxide (a-IGZO). This material parameter change results in superior electrical mobility and smaller intrinsic size, thereby achieving high frame rate and high pixel fill rate while maintaining ease of fabrication through low-temperature processing.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The oxide layer effectively prevents hydrogen atoms from reaching the channel regions, improving the stability and performance of the transistors, leading to enhanced frame rates and pixel fill rates in X-ray flat panel detectors.
Implementation Method 1
hydrogen atoms (H Plasma) diffuse into a channel region of the a-IGZO TFT during the deposition of the PIN film layer... the oxide layer at least covers channel regions of the transistors and is insulated from the read electrodes
Data Source
AI summary
The present disclosure discloses a detection substrate, a manufacturing method thereof and a flat panel detector. The detection substrate includes: a base substrate, as well as a plurality of transistors, an oxide layer, a plurality of read electrodes and a plurality of photoelectric conversion structures sequentially on the base substrate, wherein a first electrode of each of the transistors is electrically connected with each of the photoelectric conversion structures in a one-to-one correspondence mode via each of the read electrodes; a material of an active layer includes an oxide; each of the photoelectric conversion structures includes an N-type semiconductor layer, an intrinsic semiconductor layer, and a P-type semiconductor layer; and the oxide layer at least covers channel regions of the transistors and is insulated from the read electrodes.