Aberration Corrector Stepped Electrode Design

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Solution Overview

Problem

In the context of semiconductor manufacturing, existing aberration correctors for multiple electron beam irradiation systems face challenges in accurately correcting astigmatism and distortion aberrations due to the difficulty in manufacturing electrodes with sufficient thickness, which affects the precision of pattern inspection on ultrafine semiconductor patterns.

Innovation Solution

The proposed solution involves an aberration corrector with a lower electrode substrate and an upper electrode substrate, where the upper substrate has passage holes with varying diameters and a shield electrode, allowing for thin electrode thickness while effectively correcting astigmatism and distortion by extending the electric field to the space above the electrodes, thus reducing the influence on adjacent beams.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Manufacturing precision

If the thickness of each electrode of a multipole lens is increased to several tens of μm to correct aberration, then the aberration correction precision is improved, but the manufacturing difficulty increases due to narrow pitch between beams

Engineering Contradiction:
Improveaberration correction precisionVSAvoidelectrode manufacturing difficulty
Core Design Contradiction:
Manufacturing precisionVSEase of manufacture

Solution Approach 1:

The invention extends the electric field in the thickness direction (z-direction) by creating a stepped structure in the electrode substrate. The passage hole has a first diameter at the surface and a second larger diameter at a depth of t1, forming a stepped configuration that extends the electric field interaction region without increasing lateral dimensions. This allows adequate aberration correction while maintaining thin electrode thickness suitable for narrow pitch manufacturing

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

Solution Approach 2:

The electrode substrate is designed with non-uniform structure - the passage hole diameter changes with depth (smaller at surface, larger at depth t1). This local variation in geometry allows the electric field to be concentrated and extended in the thickness direction where needed for aberration correction, while keeping the overall electrode thickness small for manufacturability

Inventive Principle:
Principle #3Local quality

2Ease of manufacture

If the electrode thickness is reduced to facilitate manufacturing, then the ease of manufacture is improved, but the aberration correction capability deteriorates

Engineering Contradiction:
Improveelectrode fabrication easeVSAvoidaberration correction capability
Core Design Contradiction:
Ease of manufactureVSManufacturing precision

Solution Approach 1:

Instead of increasing lateral electrode thickness, the invention utilizes the depth dimension by creating a stepped passage hole structure. The electric field is extended along the z-axis through the stepped configuration, providing sufficient interaction length for aberration correction while keeping the electrode substrate thin and manufacturable

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

Solution Approach 2:

The passage hole structure is nested within the electrode substrate with a stepped configuration - a smaller diameter hole at the surface nested within a larger diameter cavity at depth. This nested structure allows the electric field to penetrate deeper into the substrate, extending the correction region without increasing overall thickness

Inventive Principle:
Principle #7Nested doll (Nesting)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This configuration enables precise correction of astigmatism and distortion, improving the accuracy of pattern inspection and reducing manufacturing complexity by allowing for thinner electrodes, thereby enhancing the precision of multiple electron beam irradiation systems.

Implementation Method 1

a plurality of electrode sets each being a plurality of electrodes of four poles or more than four poles, which surround a first passage hole of the plurality of first passage holes, for each of the plurality of first passage holes

Methodology Applied
Scientific EffectElectric field: Electric Field

Implementation Method 2

multipole lenses each of which is for each beam... correcting a trajectory for the purpose of correcting aberration

Methodology Applied
Scientific EffectElectrostatic lens effect: Electrostatic Lens

Implementation Method 3

a shield electrode is disposed on inner walls of the plurality of second passage holes

Methodology Applied
Scientific EffectElectric field shielding: Faraday Cage

Implementation Method 4

whose size from a top surface of a body of the upper electrode substrate to a middle of a way to a back side of the upper electrode substrate is a second hole diameter, and whose size from the middle to the back side is a third hole diameter larger than the first hole diameter and larger than the second hole diameter

Methodology Applied
Scientific EffectElectric field extension: Electric Field

Data Source

PatentUS11605523B2Aberration corrector and multiple electron beam irradiation apparatus
Publication Date: 2023.03.14 NUFLARE TECH INC
  • US11605523B2 patent drawing
  • US11605523B2 patent drawing
  • US11605523B2 patent drawing

AI summary

Aberration corrector includes a lower electrode substrate to be formed therein with plural first passage holes having a first hole diameter and making multiple electron beams pass therethrough, and to be arranged thereon plural electrode sets each being plural electrodes of four or more poles, surrounding a first passage hole, for each of the plural first passage holes, and an upper electrode substrate above the lower one, to be formed therein with plural second passage holes making multiple electron beams pass therethrough, whose size from the top of the upper electrode substrate to the middle of way to the back side of the upper electrode substrate is a second hole diameter, and whose size from the middle to the back side is a third hole diameter larger than each of the first and second hole diameters, wherein a shield electrode is on inner walls of plural second passage holes.