Abrasive Particle Crystallinity Control in CMP Slurry
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Solution Overview
Problem
In the Chemical Mechanical Polishing (CMP) process for ultrahigh integrated semiconductors, the high crystallinity and size of abrasive particles lead to increased polishing speed but also elevate the occurrence of micro scratches, necessitating optimization to minimize these scratches.
Innovation Solution
The method involves preparing raw material precursors, drying them, and calcining in a furnace with a reduced oxygen atmosphere to relax the crystallinity of abrasive particles, followed by mixing with solvents and dispersing agents, milling, filtering, and aging to create a CMP slurry that reduces micro scratches.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If the size of abrasive particles is increased, then the polishing speed increases, but the occurrence rate of micro scratch on the polishing surface increases
Solution Approach 1:
The patent changes the crystallinity parameter of abrasive particles by controlling the calcination atmosphere (oxygen concentration). By adjusting the oxygen concentration during calcination, the crystallinity of particles is controlled to achieve an optimal balance between polishing speed and micro scratch reduction, resolving the contradiction between productivity and surface quality
2Productivity
If the crystallinity of abrasive particles is increased, then the polishing speed increases, but the occurrence rate of micro scratch on the polishing surface increases
Solution Approach 1:
The patent directly controls the crystallinity parameter through calcination atmosphere adjustment. By varying oxygen concentration during calcination, the crystallinity of abrasive particles is optimized to achieve both high polishing speed and low micro scratch rate, resolving the contradiction between productivity and surface quality
3Adaptability or versatility
If ceria is manufactured by solid-phase synthesis method, then the etching selectivity of oxide film with respect to nitride film is improved, but the crystallinity and hardness increase causing micro scratch
Solution Approach 1:
The patent modifies the manufacturing parameters of ceria by controlling the calcination atmosphere (oxygen concentration). This parameter change allows the ceria to maintain high etching selectivity while reducing crystallinity and hardness, thereby minimizing micro scratch occurrence during CMP processes
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach effectively minimizes micro scratches during the CMP process by controlling the crystallinity and size distribution of abrasive particles, enhancing the polishing performance and selectivity while maintaining a suitable polishing rate.
Implementation Method 1
calcining the dried raw material precursor using a calcination furnace where a gas atmosphere having relatively less oxygen in comparison with an air atmosphere is created
Data Source
AI summary
Disclosed are abrasive particles, a method for manufacturing the abrasive particles, and a method for manufacturing a Chemical Mechanical Polishing (CMP) slurry. The method for manufacturing abrasive particles for the CMP slurry includes preparing a raw material precursor, drying the raw material precursor, and calcining the dried raw material precursor using a calcination furnace where a gas atmosphere having relatively less oxygen in comparison with an air atmosphere is created.