Abrasive-Free CMP for Organic Layer Planarization
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Solution Overview
Problem
Current chemical mechanical polish (CMP) processes for semiconductor manufacturing often result in mechanical defects, such as scratches and delamination, due to the use of abrasive particles, which also degrade layer quality and require additional dispersing agents that can hinder the polishing process.
Innovation Solution
A CMP process using a polishing composition devoid of abrasive particles, comprising an oxidizing agent, surfactant, pH adjusting agent, and polishing accelerator, applied to organic layers made of polysilazane-based, polysiloxane-based, or spin-on hardmask materials, to planarize semiconductor substrates effectively without mechanical defects.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If abrasive particles are used in CMP process, then polishing capability is improved, but mechanical defects such as scratches and delamination occur
Solution Approach 1:
The patent extracts and removes abrasive particles from the polishing composition, creating an abrasive-free CMP process. This eliminates the source of mechanical defects while maintaining polishing capability through alternative mechanisms involving oxidizing agents and chemical reactions on the organic layer surface.
Solution Approach 2:
The patent replaces the mechanical abrasion mechanism with a chemical reaction mechanism. Oxidizing agents chemically react with the organic layer material (polysilazane, polysiloxane, or SOH), converting it to a softer form that can be removed through chemical-mechanical polishing without requiring hard abrasive particles, thus preventing scratches and delamination.
2Manufacturing precision
If dispersing agents are added to CMP composition, then abrasive particle distribution is improved, but layer quality deteriorates and additional defects are introduced
Solution Approach 1:
The patent removes dispersing agents from the polishing composition by eliminating the need for abrasive particles. Without abrasive particles to disperse, the harmful dispersing agents are no longer required, thereby preventing their negative effects on layer quality and introducing a simpler, cleaner chemical composition.
3Manufacturing precision
If conventional CMP process is used, then planarization is achieved, but abrasive particle diffusion and additional process complexity occur
Solution Approach 1:
The patent extracts abrasive particles and dispersing agents from the polishing composition, simplifying the overall process. The abrasive-free composition eliminates concerns about particle diffusion, contamination, and the need for specialized dispersing agents, reducing process complexity while maintaining effective planarization through chemical reaction mechanisms.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution achieves planarization of semiconductor substrates with improved mechanical and structural reliability, reducing defects like scratches and dimples, and avoids issues related to abrasive particle diffusion and dispersing agents, while maintaining or enhancing polishing efficiency.
Implementation Method 1
The polishing composition may include an oxidizing agent and may be devoid of abrasive particles
Data Source
AI summary
In a method of manufacturing a semiconductor device, mask patterns are formed on a semiconductor substrate. An organic layer is formed on the semiconductor substrate to cover the mask patterns. An upper portion of the organic layer is planarized using a polishing composition. The polishing composition includes an oxidizing agent and is devoid of abrasive particles.