Alternating Current Anti-Reflective Coating for Semiconductor Vias
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Solution Overview
Problem
The existing dual Damascene structure manufacturing process faces issues with anti-reflective coatings not filling vias or openings well, leading to poor morphology of trenches and affecting electrical properties.
Innovation Solution
Applying alternating current around the base during the formation of the anti-reflective coating generates a magnetic field force that helps weakly charged particles in the coating material to squeeze out defects like holes and bubbles, ensuring a better fill and maintaining good sidewall morphology during etching.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If conventional etching processes are used to form aluminum metal wiring, then the process is simple and established, but copper cannot be etched effectively and requires a new dual Damascene structure
Solution Approach 1:
The patent changes the etching parameters and process conditions to make the etching process compatible with copper material. By adjusting etching chemistry, plasma conditions, and process parameters, the conventional etching process is adapted to effectively etch copper while maintaining process simplicity and control.
2Manufacturing precision
If anti-reflective coating is formed without alternating current, then the process is simple, but the coating cannot fill vias or openings well and defects remain
Solution Approach 1:
The patent applies periodic alternating current during the anti-reflective coating formation process. The AC signal periodically modulates the coating deposition, creating dynamic conditions that enable better material flow into vias and openings. This periodic action eliminates defects like holes and bubbles while ensuring complete fill, achieving high manufacturing precision with controlled process complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method effectively fills openings with anti-reflective coatings, reducing defects and improving the morphology of trenches, which enhances the electrical properties of the dual Damascene structure.
Implementation Method 1
alternating current will generate a magnetic field force perpendicular to the surface of the base
Implementation Method 2
the alternating current will generate a magnetic field force perpendicular to the surface of the base. Since some particles in the anti-reflective coating material are weakly charged, when there are defects such as holes and bubbles in the anti-reflective coating material
Data Source
AI summary
The present disclosure discloses a method for forming a semiconductor structure. The method for forming a semiconductor structure includes: providing a base; forming a dielectric layer on the base; forming one or more openings in the dielectric layer; and forming an anti-reflective coating in the one or more openings. When forming the anti-reflective coating, alternating current is applied around the base.