Acid-Decomposable Resist Polymer for Lithography Defects
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Solution Overview
Problem
Current resist polymers used in DUV excimer laser and electron beam lithography suffer from defects and large line edge roughness, limiting their effectiveness in microfabrication processes.
Innovation Solution
A resist polymer comprising an acid-decomposable unit with specific structural units, such as those represented by formulas (1) and (3), which enhances solubility in developers and reduces line edge roughness by decomposing in response to acids, thereby improving patterning processes.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a polymer with acid-decomposable side chain is used to achieve alkali solubility, then solubility in developer is improved, but line edge roughness and defects increase
Solution Approach 1:
The polymer structure is segmented into distinct functional units: a backbone providing structural integrity and solubility control, and decomposable side chains providing alkaline solubility. This segmentation allows each part to perform its function independently, reducing line edge roughness while maintaining solubility.
Solution Approach 2:
The invention changes the chemical parameters of the polymer by introducing specific decomposable units with controlled decomposition characteristics. This modifies the solubility parameters and decomposition behavior to achieve both good developer solubility and reduced line edge roughness simultaneously.
2Manufacturing precision
If a styrene resin with crosslinking agent is used to improve resolution and etching resistance, then manufacturing precision is improved, but adaptability to ArF excimer laser lithography is lost
Solution Approach 1:
The invention changes the chemical composition parameters by replacing styrene-based structures with acrylic resin-based structures that have appropriate transparency and reactivity for ArF excimer laser lithography, while maintaining crosslinking capabilities through carefully selected decomposable units.
Solution Approach 2:
The invention creates a composite polymer structure combining acrylic resin backbone with integrated decomposable crosslinking units. This composite approach maintains the mechanical properties and resolution characteristics of crosslinked resins while achieving the optical properties needed for ArF laser application.
3Ease of manufacture
If simpler copolymerization is used to reduce complexity, then ease of manufacture is improved, but line edge roughness and defects cannot be sufficiently improved
Solution Approach 1:
The invention optimizes the compositional parameters of the copolymer by controlling the ratios and types of monomers used. This parameter optimization achieves improved line edge roughness and defect reduction through standard copolymerization processes without requiring complex manufacturing steps.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The resist polymer exhibits improved solubility, reduced defects, and maintains high sensitivity and resolution, effectively addressing the limitations of conventional polymers in DUV excimer laser and electron beam lithography.
Implementation Method 1
a resist polymer comprising, as a structural unit, an acid-decomposable unit having a structure represented by the following formula (1) or (2)... which enhances solubility in developers and reduces line edge roughness by decomposing in response to acids
Implementation Method 2
a 'chemically amplified resist' containing a photo acid generator has been proposed... suitable for microfabrication using excimer lasers, electron beams and X-rays
Data Source
AI summary
To provide a resist polymer comprising, as a structural unit, an acid-decomposable unit having a structure represented by formula (1) or (2) which exhibits a small line edge roughness and produces little defects in DUV excimer laser lithography or the like.In formulas (1) and (2), n represents an integer of 2 to 24; J represents a single bond or a divalent hydrocarbon group which may have a substituent/heteroatom when n=2, or represents an n-valent hydrocarbon group which may have a substituent/heteroatom when n≧3; E represents a residue of a polymerization terminator, a chain transfer agent or a polymerization initiator; K1 and K2 each represent at least one selected from alkylene, cycloalkylene, oxyalkylene, arylene, a divalent thiazoline ring, a divalent oxazoline ring and a divalent imidazoline ring; L1 and L2 each represent at least one selected from —C(O)O—, —C(O)— and —OC(O)—; M1, M2 and M3 each represent at least one selected from alkylene, cycloalkylene, oxyalkylene and arylene; Y, Y1 and Y2 each represent an acid-decomposable linkage; k1, k2, l1, l2, m1, m2, m3 and n1 each represent 0 or 1; and R1 represents H or a methyl group.