Acid Labile Polymer for High-Resolution Resist Composition
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Solution Overview
Problem
Current resist compositions face challenges in achieving high sensitivity, resolution, and etching resistance for advanced lithography techniques, particularly in miniaturized patterns, where sensitivity is compromised due to increased acceleration voltage and acid diffusion issues.
Innovation Solution
A polymer with a carboxyl group substituted by an acid labile group, specifically containing a 1,2,3-indanyl or 1,2-tetrahydronaphthyl structure, is used as a base resin in a chemically amplified resist composition, enhancing etching resistance and resolution through controlled acid diffusion and improved dissolution contrast.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If a higher acceleration voltage is used in EB lithography, then the degree of resolution and size controlling are improved, but the sensitivity of the resist is decreased
Solution Approach 1:
The patent changes the chemical composition parameters of the resist by introducing a polymer with a specific structure containing a 1,2,3-indanyl or 1,2-tetrahydronaphthyl group. This structural modification enables the resist to maintain high sensitivity even when exposed to higher acceleration voltages (10-100 keV), thereby resolving the contradiction between resolution improvement and sensitivity loss
Solution Approach 2:
The patent uses a chemically amplified resist composition that combines the novel polymer with conventional resist components. This composite material approach leverages the unique properties of the new polymer structure while maintaining compatibility with existing resist formulations, achieving both high resolution and high sensitivity
2Measurement precision
If the resist film is made thinner to prevent pattern fall, then the resolution is improved, but the dry-etching resistance becomes insufficient
Solution Approach 1:
The patent modifies the chemical structure parameters of the resist polymer by incorporating a 1,2,3-indanyl or 1,2-tetrahydronaphthyl group. This structural change provides enhanced etching resistance even in thin film configurations, allowing the resist to maintain both high resolution and sufficient mechanical strength during the dry-etching process
3Productivity
If the acid diffusion is increased to improve dissolution contrast, then the sensitivity is improved, but the manufacturing precision of the pattern deteriorates
Solution Approach 1:
The patent introduces a polymer with specific local structural features (1,2,3-indanyl or 1,2-tetrahydronaphthyl group) that create localized chemical environments. This local structural modification allows for controlled acid diffusion characteristics, enabling high dissolution contrast while maintaining precise pattern configuration by limiting excessive acid migration
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The polymer composition achieves high sensitivity, resolution, and excellent etching resistance, with reduced acid diffusion and improved pattern configuration, making it suitable for VLSI manufacture and EUV exposure processes.
Implementation Method 1
it has become clear that a polymer whose hydrogen atom of a carboxyl group is substituted by an acid labile group having a specific structure shows a high sensitivity and a high contrast of a dissolution rate before and after an exposure to a high energy beam
Implementation Method 2
a polymer whose hydrogen atom of a carboxyl group is substituted by an acid labile group having a specific structure shows... a small difference in a size between a dense pattern and a sparse pattern, and a small line edge roughness
Data Source
AI summary
A polymer suitable as a base resin for a positive resist composition, in particular a chemically amplified positive resist composition, having a higher resolution, a larger exposure allowance, a smaller sparse-dense size difference, a better process applicability, a better pattern configuration after exposure, and in addition, a further excellent etching resistance, than a conventional positive resist. A positive resist composition using the same, a patterning process, and a novel polymerizable compound to obtain the polymer. A polymer has a hydrogen atom of at least a carboxyl group is substituted by an acid labile group represented by the following general formula (2), a positive resist composition using the same, a patterning process, and a novel polymerizable compound to obtain a polymer like this.