Acidic Silicon Polishing Composition for High-Speed Removal
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Existing polishing methods struggle to achieve high-speed polishing of simple-substance silicon under acidic conditions, necessitating improved polishing compositions and methods.
Innovation Solution
A polishing composition containing abrasives and an adsorbing compound with a pH between 1 and 6, where the product of adhesion force and coverage of the abrasives on the substrate surface ranges from 50 to 100, optimized using atomic force microscopy, enhances polishing efficiency.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If an acidic polishing composition is used to polish films such as silicon oxide and silicon nitride, then the polishing performance for these films is improved, but the polishing removal rate for simple-substance silicon deteriorates
Solution Approach 1:
The invention changes the chemical composition parameters of the polishing slurry by introducing specific organic compounds (carboxylic acids, sulfonic acids, phosphonic acids, or their salts) into the acidic polishing composition. This chemical parameter modification enables the slurry to achieve high polishing removal rates for both silicon oxide/silicon nitride films and simple-substance silicon simultaneously, resolving the contradiction between film polishing performance and silicon polishing productivity
Solution Approach 2:
The invention creates a composite polishing composition that combines traditional acidic slurry components with newly introduced organic compounds containing carboxylic acid, sulfonic acid, or phosphonic acid groups. This composite formulation integrates the benefits of acidic conditions for film polishing with the enhanced silicon removal capability provided by the organic additives, achieving dual-purpose polishing effectiveness
2Productivity
If a highly alkaline polishing composition is used to achieve high-speed polishing of simple-substance silicon, then the polishing removal rate is improved, but the ability to polish other films such as silicon oxide and silicon nitride deteriorates
Solution Approach 1:
The invention modifies the pH parameter range and chemical composition by using weak acids or their salts instead of strong bases, creating a mildly acidic to neutral environment. This parameter change allows the polishing composition to effectively polish simple-substance silicon while simultaneously maintaining compatibility with silicon oxide and silicon nitride film polishing, eliminating the need to choose between different polishing regimes
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The composition enables high-speed polishing of simple-substance silicon with improved removal rates and reduced substrate defects, maintaining appropriate adhesion forces for effective polishing.
Implementation Method 1
a polishing composition for polishing simple-substance silicon, contains: abrasives; and an adsorbing compound
Implementation Method 2
the adhesion force of the abrasives to the surface of the polished substrate
Implementation Method 3
the adhesion force is attachment strength between the abrasives and the surface of the substrate calculated by the force curve measurement using a probe provided in an atomic force microscope
Data Source
AI summary
There are provided a polishing composition and a polishing method that enable high-speed polishing of simple-substance silicon under acidic conditions. A polishing composition for polishing simple-substance silicon contains: abrasives; and an adsorbing compound, in which, the pH is 1 or more and 6 or less, when a substrate having a surface containing simple-substance silicon is subjected to polishing of the surface using an aqueous solution containing the adsorbing compound and water, and then the adhesion force of the abrasives to the surface of the polished substrate and the coverage of the adsorbing compound are measured, a value obtained by multiplying the adhesion force and the coverage is more than 50 and less than 100, the adhesion force is attachment strength between the abrasives and the surface of the substrate calculated by the force curve measurement using a probe provided in an atomic force microscope, the probe contains the same material as that of the abrasives and has a tip portion having the same radius of curvature as that of the abrasives, and the coverage is the ratio of the area of a part covered with the adsorbing compound of the surface of the substrate to the area of the entire surface of the substrate.