Acoustic Wave Filter Wiring Layout for Steep Low-Loss Passbands

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Solution Overview

Problem

Existing frequency variable type acoustic wave devices face challenges in maintaining steepness and low loss characteristics of the pass band, particularly on the low-band side, due to limitations in the configuration of capacitance elements and acoustic wave resonators.

Innovation Solution

The proposed acoustic wave device incorporates a configuration with a first and second resonance circuit, featuring a first acoustic wave resonator with an interdigital transducer (IDT) electrode and a frequency variable circuit, including a capacitance element and a switch, where the second capacitance element is formed by intersecting IDT and capacitance wirings on the same substrate, allowing for adjustable film thicknesses and high Q values, thereby enhancing the bandpass characteristic.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Manufacturing precision

If a comb-tooth electrode is used as the capacitance element to enhance the steepness of the pass band on the low-band side, then the steepness is improved, but the low loss characteristic in the pass band deteriorates due to low Q value

Engineering Contradiction:
Improvesteepness of pass bandVSAvoidlow loss characteristic
Core Design Contradiction:
Manufacturing precisionVSReliability

Solution Approach 1:

The capacitance element is segmented into multiple capacitors connected in series, where at least one capacitor has a capacitance value different from the others. This segmentation allows optimization of the Q value while maintaining the desired capacitance for steepness, resolving the contradiction between steepness and low loss characteristic.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

Different capacitors in the series connection have different capacitance values, creating local quality variations. This allows specific capacitors to be optimized for high Q value (low loss) while others contribute to the overall capacitance needed for steepness, thereby resolving the technical contradiction.

Inventive Principle:
Principle #3Local quality

2Reliability

If the film thickness of the IDT electrode is increased to improve the Q value of the capacitance element, then the low loss characteristic is improved, but the manufacturing complexity and cost increase

Engineering Contradiction:
ImproveQ value of capacitance elementVSAvoidfilm thickness control
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

Instead of changing the film thickness parameter of the IDT electrode, the invention changes the capacitance values of the capacitors in the series connection. This parameter substitution allows achieving the desired Q value without the complexity and cost of precise film thickness control.

Inventive Principle:
Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This configuration secures the steepness and low loss characteristic of the pass band on the low-band side, improving the bandpass characteristic of the acoustic wave device by allowing for larger capacitance Q values and adjustable capacitance values without increasing the film thickness of the IDT electrode.

Implementation Method 1

a first acoustic wave resonator including a first interdigital transducer (IDT) electrode

Methodology Applied
Scientific EffectPiezoelectric effect: Piezoelectric Effect

Data Source

PatentUS10715107B2Acoustic wave device, radio frequency front-end circuit, and communication device
Publication Date: 2020.07.14 MURATA MFG CO LTD
  • US10715107B2 patent drawing
  • US10715107B2 patent drawing
  • US10715107B2 patent drawing

AI summary

A variable filter (10) includes a parallel arm resonance circuit and a serial arm resonance circuit, the parallel arm resonance circuit includes a parallel arm resonator (p1) having an IDT electrode (121) and a frequency variable circuit (11) connected to the parallel arm resonator (p1), the frequency variable circuit (11) includes a capacitance element (C1) and a switch (SW), the variable filter (10) further includes a capacitance element (C2) connected between a serial arm and ground, the IDT electrode (121), an IDT wiring connected to the IDT electrode (121), and a capacitance wiring connected to the capacitance element (C1) are formed on the same substrate, a wiring (141 or 144) of the capacitance wirings and a wiring (143) of the IDT wirings intersect with each other, and the capacitance element (C2) is configured of the capacitance wiring and the IDT wiring in the intersection region.