Acoustic Multilayer Elastic Wave Structure for 6 GHz Strength

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Solution Overview

Problem

Existing elastic wave devices face challenges in achieving high impedance ratios and maintaining mechanical strength in ultra-high frequency bands above 6 GHz, particularly due to the limitations of piezoelectric thin films becoming extremely thin, which affects their performance and practical usability.

Innovation Solution

The elastic wave device utilizes higher-order modes of resonance characteristics of bulk waves by adjusting the type of piezoelectric substrate and the thickness of each layer of the acoustic multilayer film, allowing for a large impedance ratio without the need for extremely thin substrates or cavities, and incorporates a structure with alternately stacked low and high acoustic impedance films to excite higher-order modes.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Speed

If the piezoelectric thin film thickness is reduced to increase excitation frequency in cavity FBARs, then the excitation frequency increases, but the mechanical strength deteriorates and the film becomes difficult to maintain

Engineering Contradiction:
Improveexcitation frequencyVSAvoidmechanical strength of piezoelectric thin film
Core Design Contradiction:
SpeedVSStrength

Solution Approach 1:

The invention changes the vibration mode from fundamental mode to higher-order modes (first overtone, second overtone, etc.), which allows achieving higher excitation frequencies (6 GHz or higher) without reducing the piezoelectric thin film thickness below 0.3 μm, thereby maintaining mechanical strength while increasing frequency

Inventive Principle:
Principle #35Parameter changes

Solution Approach 2:

The invention introduces acoustic multilayer films with alternating high and low acoustic impedance layers, creating a complex layered structure that enables higher-order mode vibrations and achieves ultra-high frequencies without extreme thinning of the piezoelectric layer

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

2Ease of manufacture

If AlN or ScAlN polycrystalline thin films are used in cavity FBARs, then the device structure is simplified, but attenuation at ultra-high frequencies increases and impedance ratio deteriorates

Engineering Contradiction:
Improvestructural simplicityVSAvoidimpedance ratio at ultra-high frequencies
Core Design Contradiction:
Ease of manufactureVSReliability

Solution Approach 1:

The invention uses a composite structure of acoustic multilayer films combining materials with different acoustic impedances (such as AlN/SiN, AlN/SiO2, ScAlN/SiN, ScAlN/SiO2 alternately stacked), which suppresses spurious vibrations and maintains high impedance ratios (60 dB or more) at ultra-high frequencies while keeping the piezoelectric layer as polycrystalline for manufacturing simplicity

Inventive Principle:
Principle #40Composite materials

3Speed

If the piezoelectric thin film thickness is reduced below 0.3 μm to achieve 6 GHz or higher frequencies, then the excitation frequency increases, but manufacturing precision and quality control become extremely difficult

Engineering Contradiction:
Improveexcitation frequencyVSAvoidfilm thickness control precision
Core Design Contradiction:
SpeedVSManufacturing precision

Solution Approach 1:

The invention changes the vibration mode to higher-order modes, allowing the piezoelectric thin film thickness to be maintained at 0.3 μm or more, which significantly improves manufacturing precision and quality control while achieving 6 GHz or higher excitation frequencies

Inventive Principle:
Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This configuration enables good characteristics with a large impedance ratio in the ultra-high frequency band of 6 GHz or higher, maintaining sufficient mechanical strength and improving device performance beyond conventional limitations.

Implementation Method 1

a piezoelectric substrate; an electrode provided in contact with the piezoelectric substrate

Methodology Applied
Scientific EffectPiezoelectric effect: Piezoelectric Effect

Implementation Method 2

the elastic wave device is configured to utilize higher-order modes of resonance characteristics of bulk waves

Methodology Applied
Scientific EffectResonance: Resonance

Data Source

PatentUS20220294415A1Elastic wave device
Publication Date: 2022.09.15 MURATA MFG CO LTD
  • US20220294415A1 patent drawing
  • US20220294415A1 patent drawing
  • US20220294415A1 patent drawing

AI summary

An elastic wave device capable of obtaining good characteristics while maintaining sufficient mechanical strength in an ultra-high frequency band of 6 GHz or higher includes: a piezoelectric substrate; an electrode in contact with the piezoelectric substrate; and an acoustic multilayer film in contact with the piezoelectric substrate and/or the electrode. The elastic wave device is configured to utilize higher-order modes of resonance characteristics of bulk waves. The acoustic multilayer film has a low acoustic impedance film and a high acoustic impedance film which are alternately stacked.