Acoustic Resonator Perimeter Structures for Multi-Standard RF Filters

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Solution Overview

Problem

Conventional RF technologies in mobile devices face limitations, leading to drawbacks such as increased RF complexity and performance issues due to the coexistence of new and legacy standards, and the growing demand for higher data rates.

Innovation Solution

The development of a single crystal acoustic resonator or filter using wafer level technologies, involving the formation of metal electrodes with varying geometric areas and perimeter structures coupled with a piezoelectric layer, and ion implantations to enhance device performance metrics.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Adaptability or versatility

If conventional RF technology is used to support multiple standards, then device compatibility is improved, but RF complexity increases

Engineering Contradiction:
Improvecompatibility with multiple standardsVSAvoidRF complexity
Core Design Contradiction:
Adaptability or versatilityVSDevice complexity

Solution Approach 1:

The acoustic resonator device is designed with adjustable frequency characteristics that enable it to operate across multiple RF standards (LTE, 5G, Wi-Fi, etc.) using a single device architecture. The resonator can be tuned to different frequency ranges through control circuitry that adjusts the effective resonant frequency, eliminating the need for multiple dedicated resonators for different standards.

Inventive Principle:
Principle #6Universality (Multi-functionality)

Solution Approach 2:

The resonator incorporates dynamic frequency tuning capability where the resonant frequency can be adjusted in real-time based on the required communication standard. This is achieved through variable capacitance elements, varactor diodes, or control voltages that modify the resonator's electrical characteristics, allowing a single static physical structure to perform multiple dynamic functions.

Inventive Principle:
Principle #15Dynamics

2Productivity

If higher data rates are implemented, then communication performance is improved, but device performance issues arise due to RF limitations

Engineering Contradiction:
Improvedata rateVSAvoiddevice performance
Core Design Contradiction:
ProductivityVSReliability

Solution Approach 1:

The resonator is designed with adjustable electrical and mechanical parameters that can be optimized for different data rate requirements. By changing the resonant frequency, quality factor (Q), and impedance characteristics, the device can adapt to support higher data rates while maintaining stability and performance. The perimeter structure geometry can be modified to achieve desired frequency responses for high-speed communication.

Inventive Principle:
Principle #35Parameter changes

Solution Approach 2:

The resonator device incorporates pre-configurable frequency ranges and performance characteristics that are designed in advance to accommodate future higher data rate requirements. The device can be pre-tuned or pre-configured for different operational modes, ensuring that when higher data rates are needed, the resonator is already capable of supporting those conditions without requiring redesign.

Inventive Principle:
Principle #10Preliminary action

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach improves the performance of acoustic resonator devices by increasing their efficiency and adaptability to varying standards, addressing the limitations of conventional RF technologies and supporting higher data rate requirements.

Implementation Method 1

a piezoelectric layer overlying a substrate

Methodology Applied
Scientific EffectPiezoelectric effect: Piezoelectric Effect

Implementation Method 2

ion implantations to enhance device performance metrics

Methodology Applied
Scientific EffectIon implantation: Ion Implantation

Data Source

PatentUS11728781B2Method for fabricating an acoustic resonator device with perimeter structures
Publication Date: 2023.08.15 AKOUSTIS TECHNOLOGIES CORP
  • US11728781B2 patent drawing
  • US11728781B2 patent drawing
  • US11728781B2 patent drawing

AI summary

A method of manufacture for an acoustic resonator or filter device. In an example, the present method can include forming metal electrodes with different geometric areas and profile shapes coupled to a piezoelectric layer overlying a substrate. These metal electrodes can also be formed within cavities of the piezoelectric layer or the substrate with varying geometric areas. Combined with specific dimensional ratios and ion implantations, such techniques can increase device performance metrics. In an example, the present method can include forming various types of perimeter structures surrounding the metal electrodes, which can be on top or bottom of the piezoelectric layer. These perimeter structures can use various combinations of modifications to shape, material, and continuity. These perimeter structures can also be combined with sandbar structures, piezoelectric layer cavities, the geometric variations previously discussed to improve device performance metrics.