Acoustic Wave Resonator Reflector Pitch for Lower-Frequency Return Loss
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Solution Overview
Problem
Acoustic wave resonators in mobile phone front-end circuits face issues with high return loss at frequencies lower than the resonant frequency due to spurious waves, degrading bandpass characteristics.
Innovation Solution
The acoustic wave element incorporates a piezoelectric layer with IDT electrodes on both surfaces and reflectors, where the IDT-reflector gap is smaller than the reflector wave length, and the reflector wave length is greater than the IDT wave length, to generate a spurious wave that cancels out the return loss at lower frequencies.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional IDT electrodes and reflectors are used in acoustic wave resonators, then the basic resonant function is achieved, but return loss increases at frequencies lower than the resonant frequency due to spurious waves
Solution Approach 1:
The invention converts the harmful spurious waves into beneficial cancellation waves by carefully designing the reflector array pitch to be larger than the IDT array pitch. This configuration generates spurious waves from the reflectors that are out of phase with the unwanted reflections, causing them to cancel each other out and reduce return loss at frequencies below the resonant frequency.
Solution Approach 2:
The invention changes the critical parameter of array pitch relationship between IDT and reflector elements. By setting the reflector array pitch (Pr) to be larger than the IDT array pitch (Pi), the phase characteristics of reflected waves are modified, enabling destructive interference of spurious waves and constructive interference at the desired resonant frequency.
2Productivity
If multiple filter devices are arranged in mobile phone front-end circuits for multi-band systems, then data transfer speed is increased, but isolation between adjacent bands and loss characteristics become critical requirements that are difficult to meet
Solution Approach 1:
The invention converts the harmful effect of spurious wave reflections into a beneficial cancellation mechanism. By designing the reflector array with a larger pitch than the IDT array, the reflected spurious waves are transformed into cancellation waves that reduce return loss, thereby improving isolation characteristics and enabling better bandpass performance in multi-band filter systems.
Solution Approach 2:
The invention modifies the array pitch parameter relationship to optimize both resonant frequency performance and lower frequency rejection. By setting Pr > Pi, the system achieves improved return loss characteristics across the frequency spectrum, enabling multiple filters to operate with better isolation and lower loss in multi-band mobile phone systems.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration reduces or prevents the increase of return loss at frequencies lower than the resonant frequency, improving the bandpass characteristics and reducing higher-order mode generation.
Implementation Method 1
an acoustic wave element includes a piezoelectric layer, interdigital transducer (IDT) electrodes that are provided on two main surfaces of the piezoelectric layer
Implementation Method 2
a plurality of reflectors that are provided on both of the two main surfaces... each include a plurality of reflection electrode fingers... G is smaller than Pr
Data Source
AI summary
An acoustic wave element includes IDT electrodes on two main surfaces of a piezoelectric layer, and reflectors on both of the two main surfaces. The IDT electrodes each include electrode fingers extending in a second direction that intersects a first direction. The reflectors each include reflection electrode fingers extending in the second direction. An array pitch of the electrode fingers along the first direction is Pi, an array pitch of the reflection electrode fingers is Pr, and an IDT-reflector gap in the first direction d1 between a center of an electrode finger and a center of a reflection electrode finger that is closest to the IDT electrode among the plurality of reflection electrode fingers is G, a thickness of the piezoelectric layer is smaller than or equal to twice Pi, G is smaller than Pr, and Pr is greater than Pi.


