Acoustic Wave Electrode Layout With Piezoelectric Thickness Tuning
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Solution Overview
Problem
Existing acoustic wave devices using piezoelectric films of LiNbO3 or LiTaO3 often experience unwanted bulk waves that cause ripples in frequency characteristics due to reflections and extractions by support structures or wiring lines, leading to degraded performance.
Innovation Solution
The acoustic wave device incorporates a piezoelectric layer with varying thickness in specific regions to alter the propagation mode of unwanted bulk waves, using a thickness-shear mode bulk wave and adjusting the thickness of the piezoelectric layer in overlapping and non-overlapping areas of electrode films to prevent ripple formation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If a uniform thickness piezoelectric layer is used, then the device structure is simple and easy to manufacture, but unwanted bulk waves are excited and cause ripples in frequency characteristics
Solution Approach 1:
The piezoelectric layer is designed with different thicknesses in different regions: a first thickness in regions overlapping the first electrode film and a second thickness in regions not overlapping the first electrode film. This local thickness variation modifies the propagation characteristics of bulk waves in specific areas, preventing unwanted bulk waves from being extracted by the second electrode film while maintaining overall structural feasibility.
Solution Approach 2:
The invention changes the thickness parameter of the piezoelectric layer from a uniform value to a spatially varying value. By controlling the thickness distribution, the invention alters the acoustic impedance and wave propagation characteristics, thereby suppressing bulk wave extraction and eliminating ripples in frequency characteristics.
2Ease of operation
If wiring lines connected to different potentials face each other, then electrical connection is achieved, but unwanted bulk-wave signals are extracted causing frequency ripple
Solution Approach 1:
The piezoelectric layer thickness is specifically varied in regions associated with the electrode films to create local acoustic impedance differences. This prevents bulk waves generated near the first electrode film from being efficiently extracted by the second electrode film, even when the electrode films are positioned to face each other for electrical connection.
Solution Approach 2:
The invention converts the potential harmful effect of bulk wave propagation into a beneficial outcome by using the thickness variation to redirect or dissipate bulk wave energy. The thickness difference acts as an acoustic barrier that transforms the bulk wave path, preventing it from reaching the second electrode film and causing frequency ripple.
3Reliability
If reflectors are arranged on both sides of IDT electrode, then acoustic wave resonance is formed, but bulk waves are reflected by support causing frequency ripple
Solution Approach 1:
The piezoelectric layer thickness is modified in specific regions to create acoustic impedance gradients that affect bulk wave propagation. This local thickness variation prevents bulk waves reflected by the support from being extracted by the electrode films, thereby eliminating frequency ripple while preserving the desired acoustic wave resonance.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration effectively reduces or prevents ripples in frequency characteristics by setting different propagation modes for unwanted bulk waves, enhancing the device's performance and stability.
Implementation Method 1
a piezoelectric layer 14 on the support substrate 13
Implementation Method 2
an unwanted bulk wave may sometimes be excited. The bulk wave propagates in the thickness direction of a piezoelectric substrate
Data Source
AI summary
An acoustic wave device includes a support substrate, a piezoelectric layer on the support substrate, functional electrodes on the piezoelectric layer, and first and second electrode films positioned on the piezoelectric layer to face each other and having different potentials from each other. A thickness of the piezoelectric layer in at least a portion of a first region overlapping the first electrode film in plan view is different from a thickness of the piezoelectric layer in at least a portion of a second region not overlapping the first electrode film in plan view.


