Acrylate Resist Composition for 193 nm Lithography Resolution
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Conventional positive resist compositions face challenges in achieving high resolution and lithography properties, especially when using light with wavelengths shorter than 248 nm, and they suffer from issues like solubility problems during double patterning processes, leading to deteriorated resist pattern quality.
Innovation Solution
A positive resist composition is developed that includes a polymeric compound with specific structural units, such as those derived from acrylate esters with acid-dissociable groups, which enhances solubility in alkali developing solutions and improves compatibility with organic solvents, allowing for better lithography performance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Illumination intensity
If PHS-based resins are used as base resin component, then high transparency to KrF excimer laser (248 nm) is achieved, but inadequate transparency for light with wavelengths shorter than 248 nm (such as 193 nm) results in low resolution
Solution Approach 1:
The patent changes the chemical composition parameters of the base resin by using acrylic resins containing specific structural units (a0, a1, a5) with controlled ratios, which alters the optical properties to achieve high transparency at shorter wavelengths while maintaining lithography performance
Solution Approach 2:
The patent creates a composite resist composition by combining multiple structural units (a0 from cyclic sulfate, a1 from acrylate ester with acid-dissociable group, a5 from aliphatic hydrocarbon) in specific proportions to achieve both high transparency and high resolution characteristics
2Manufacturing precision
If double patterning process is used to improve resolution, then higher level of resolution is achieved, but the first resist pattern is adversely affected by the solvent for the second resist composition causing thickness loss or mixing
Solution Approach 1:
The patent modifies the solubility parameters of the resist composition by incorporating specific structural units that provide acid-dissociable, dissolution-inhibiting groups, making the resist pattern resistant to solvent attack during double patterning processes
Solution Approach 2:
The patent applies preliminary protection by incorporating dissolution-inhibiting groups into the resist material structure before the double patterning process, preventing solvent from dissolving or mixing with the first resist pattern
3Illumination intensity
If acrylic resins are used as base resin for ArF excimer laser lithography, then excellent transparency in the vicinity of 193 nm is achieved, but solubility problems occur during double patterning processes
Solution Approach 1:
The patent creates a composite polymeric compound combining acrylic resin units with cyclic sulfate units and aliphatic hydrocarbon units, where the cyclic sulfate provides transparency and the aliphatic hydrocarbon provides solubility stability, achieving both excellent transparency and solubility resistance
Solution Approach 2:
The patent changes the chemical structure parameters by introducing specific structural units (a0, a1, a5) with controlled ratios to simultaneously achieve high transparency at 193 nm and resistance to solvent attack during processing
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The new resist composition achieves improved solubility and lithography properties, including enhanced exposure latitude and reduced line width roughness, enabling the formation of high-resolution resist patterns even with shorter wavelength light sources.
Implementation Method 1
an acid generator (B) which generates acid upon exposure
Implementation Method 2
a base component (A) which exhibits changed solubility in an alkali developing solution under the action of acid
Data Source
AI summary
A positive resist composition including a base component (A) which exhibits changed solubility in an alkali developing solution under the action of acid and an acid-generator component (B) which generates acid upon exposure dissolved in an organic solvent (S), the base component (A) containing a polymeric compound (A1) including a structural unit (a0) derived from an acrylate ester having a cyclic group containing a sulfonyl group on the side chain thereof, a structural unit (a1) derived from an acrylate ester containing an acid dissociable, dissolution inhibiting group and a structural unit (a5) represented by general formula (a5-1) (Y1 represents an aliphatic hydrocarbon group; Z represents a monovalent organic group; a represents an integer of 1 to 3, and b represents an integer of 0 to 2, provided that a+b=1 to 3).