Actinic-Ray Sensitive Resin Composition for Lithography
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Solution Overview
Problem
Current methods for forming patterns in semiconductor production using ArF excimer laser or EUV lithography face challenges in achieving comprehensive performance, particularly in resolving line width, line pattern roughness, and in-plane uniformity, with existing resist compositions and developers failing to meet the demands for high precision and fine pattern formation.
Innovation Solution
A method involving an actinic-ray- or radiation-sensitive resin composition that includes a resin with a repeating unit capable of generating an acid when exposed, combined with a solvent and a developer containing an organic solvent, which enhances resolving power, roughness characteristics, exposure latitude, and bridge defect performance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional positive resist composition and aqueous alkali developer are used, then development process is simple, but pattern formation performance (resolving power, roughness, in-plane uniformity) is insufficient for miniaturized semiconductor elements
Solution Approach 1:
The invention changes the fundamental parameter of developer composition from aqueous alkali to organic solvent-based system. Specifically, it uses developers containing organic solvents such as cyclohexanone, 2-heptanone, or 3-pentanone, which fundamentally alters the development mechanism and enables superior pattern formation performance including improved resolving power, reduced line roughness, and enhanced in-plane uniformity for miniaturized patterns
Solution Approach 2:
The invention employs a composite resist composition system that integrates multiple functional components: (A) resin containing specific repeating units with acid-labile groups, (B) solvent components including organic solvents, (C) photoacid generator, and (D) basic compound. This composite formulation works synergistically with the organic solvent-based developer to achieve comprehensive pattern formation excellence
2Manufacturing precision
If exposure wavelength is shortened (ArF 193nm, EUV 13.5nm) to achieve higher resolving power, then line width resolution improves, but pattern formation performance (roughness, in-plane uniformity, bridge defects) deteriorates
Solution Approach 1:
The invention changes the chemical parameters of the resist system to match the physical parameters of short-wavelength exposure. The resin contains repeating units with specific structures (including aromatic rings and acid-labile groups) that are optimized for ArF and EUV exposure, enabling the generation of sufficient acid upon exposure to these short-wavelength sources while maintaining pattern integrity
Solution Approach 2:
The photoacid generator acts as an intermediary that converts the energy from short-wavelength exposure (ArF 193nm or EUV 13.5nm) into chemical action (acid generation). The basic compound serves as another intermediary that modulates the acid-base reactions during development, enabling the system to achieve both high resolving power and pattern formation quality despite the challenges of short-wavelength exposure
3Manufacturing precision
If high numerical aperture (high NA) projector lenses are used to achieve higher resolving power, then line width resolution improves, but line pattern roughness and bridge defects increase
Solution Approach 1:
The invention changes the chemical parameters of the resist composition to compensate for the increased sensitivity to roughness and bridge defects associated with high NA exposure. The specific resin structure with acid-labile groups and the organic solvent-based developer create a development process that produces smoother line patterns and reduces bridge defects even when using high numerical aperture lenses
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method significantly improves resolving power, roughness characteristics, and exposure latitude, enabling the formation of high-precision fine patterns with enhanced dissolution contrast and reduced bridge defects.
Implementation Method 1
a resin containing a repeating unit with a structural moiety that is configured to decompose when exposed to actinic rays or radiation to thereby generate an acid
Implementation Method 2
the generated acid exerts a catalytic action so that the alkali-insoluble group contained in the photosensitive composition is converted to an alkali-soluble group
Data Source
AI summary
Provided is a method of forming a pattern and an actinic-ray- or radiation-sensitive resin composition that excels in the limiting resolving power, roughness characteristics, exposure latitude (EL) and bridge defect performance. The method of forming a pattern includes (1) forming an actinic-ray- or radiation-sensitive resin composition into a film, (2) exposing the film to light, and (3) developing the exposed film with a developer containing an organic solvent. The actinic-ray- or radiation-sensitive resin composition contains (A) a resin containing a repeating unit with a structural moiety that is configured to decompose when exposed to actinic rays or radiation to thereby generate an acid, and (B) a solvent.