Actinic Ray-Sensitive Resin Composition for High-Resolution Lithography
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Solution Overview
Problem
Current microfabrication techniques face challenges in forming high-resolution independent line patterns due to issues like backward scattering in electron beam lithography and the degradation of unexposed resist areas, which affect the resolution and roughness characteristics of semiconductor devices.
Innovation Solution
An actinic ray-sensitive or radiation-sensitive resin composition is developed, containing a compound with a phenolic hydroxyl group and a specific acid labile group that enhances the deprotection reactivity and post-exposure bake sensitivity, improving the resolution and roughness characteristics of patterns formed using electron beams, X-rays, or EUV light.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If the accelerating voltage of the electron beam is increased to reduce forward scattering influence, then the forward scattering effect is diminished, but the backward scattering influence is increased and resolution deteriorates
Solution Approach 1:
A silicon oxide layer is introduced as an intermediary between the electron beam and the resist film. This intermediate layer absorbs and scatters the backward-scattered electrons before they reach the resist, thereby protecting the resist from the harmful backward scattering effects while allowing the high accelerating voltage to be used for reducing forward scattering.
Solution Approach 2:
The system is segmented into distinct functional layers: the silicon oxide layer serves as a protective intermediate layer, and the resist film serves as the pattern-forming layer. This segmentation allows each layer to perform its specific function optimally - the silicon oxide layer handles electron scattering protection while the resist layer handles pattern formation.
2Manufacturing precision
If a basic compound is added to inhibit dark reaction in unexposed portions, then the neutralization reaction deactivates acid from scattered electrons and inhibits film reduction, but the acid degradation reaction competes with neutralization and film reduction cannot be completely inhibited
Solution Approach 1:
The invention changes the chemical parameters of the resist system by selecting specific acid-labile groups with appropriately balanced reactivity. The acid-labile group is designed to have degradation reactivity that is sufficiently slow at room temperature (allowing complete neutralization) but sufficiently fast at post-exposure bake temperature (ensuring complete deprotection). This parameter optimization resolves the competition between neutralization and degradation reactions.
Solution Approach 2:
The system dynamically responds to temperature changes. At room temperature during exposure, the acid-labile group remains stable allowing neutralization to dominate. During post-exposure bake, the increased temperature activates the degradation reaction, ensuring complete deprotection. This dynamic behavior allows the system to satisfy both requirements at different stages of the process.
3Manufacturing precision
If conventional resist compositions are used for high-density pattern formation, then the process is simple, but the resolution and roughness characteristics of independent line patterns deteriorate due to backward scattering and film reduction
Solution Approach 1:
The invention uses a composite resist system consisting of multiple carefully selected components: a polymer containing specifically designed acid-labile groups, a basic compound for neutralization, and a photoacid generator. This composite material approach allows each component to contribute specific properties that collectively resolve the technical contradictions while maintaining processability.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The resin composition enables the formation of high-resolution independent line patterns with excellent shape and roughness characteristics, effectively addressing the limitations of existing technologies by reducing backward scattering and enhancing resist performance.
Implementation Method 1
a compound (B) which generates an acid due to irradiation of actinic rays or radiation
Implementation Method 2
a compound that is turned into an alkali-soluble substance due to the decomposition of a hydrophobic acid labile group caused by the catalytic action of the generated acid
Implementation Method 3
the acid generated by the influence of scattered electrons is deactivated by a neutralization reaction
Data Source
AI summary
Provided is an actinic ray-sensitive or radiation-sensitive resin composition containing a compound (A) which contains at least one phenolic hydroxyl group and at least one group where a hydrogen atom in a phenolic hydroxyl group is substituted by a group represented by the following General Formula (1)(in the formula, each of R11 and R12 independently represents a hydrogen atom, an alkyl group, a cycloalkyl group, an aryl group, or an aralkyl group; X11 represents an aryl group; M11 represents a single bond or a divalent linking group; and Q11 represents an alkyl group, a cycloalkyl group or an aryl group, wherein the number of carbon atoms which are included in the group represented by -M11-Q11 is 3 or more, and at least two of R11, R12, Q11, and X11 may form a ring by bonding to each other).